Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kyong-Jin Hwang"'
Publikováno v:
2021 43rd Annual EOS/ESD Symposium (EOS/ESD).
Latchup behavior in parasitic SCR detector structures with grounded N-Well (GNW) were studied, wherein GNW implies N-Wells biased at 0 V. The impact of design parameters such as injector to detector spacing, GNW to nearby Nwell (of a PMOS) distance,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a47e1fb451f5dff5e10a3cf657d2e97
https://doi.org/10.23919/eos/esd52038.2021.9574754
https://doi.org/10.23919/eos/esd52038.2021.9574754
Publikováno v:
2021 43rd Annual EOS/ESD Symposium (EOS/ESD).
An area-efficient novel Buried Floating PESD-doped (BFP) NPN-embedded Silicon-Controlled Rectifier (NPN-eSCR) device was evaluated for robust High Voltage (HV) Electrostatic Discharge (ESD) protection in a 130nm GLOBALFOUNDRIES® low-cost BCDLite pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7369b8dfd24820c196f0efed1b95bb46
https://doi.org/10.23919/eos/esd52038.2021.9574729
https://doi.org/10.23919/eos/esd52038.2021.9574729
Autor:
Aloysius Priartanto Herlambang, Kyong Jin Hwang, Robert Gauthier, Raunak Kumar, Jie Zeng, Kun Liu
Publikováno v:
2021 43rd Annual EOS/ESD Symposium (EOS/ESD).
A high voltage PNP device is designed with a small footprint by applying the RESURF technique. It has low turn-on resistance and high failure current. Adjusting the length of LOCOS, the PNP device shows flexibility for different voltage applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7720d0ac020b889943f31a8f723e462
https://doi.org/10.23919/eos/esd52038.2021.9574755
https://doi.org/10.23919/eos/esd52038.2021.9574755
Publikováno v:
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81bb04314fdf45f257dfdef235719a44
https://doi.org/10.1109/ipfa53173.2021.9617387
https://doi.org/10.1109/ipfa53173.2021.9617387
Publikováno v:
2020 International EOS/ESD Symposium on Design and System (IEDS).
Design optimization of Electrostatic Discharge (ESD) GGNMOS for high-voltage applications in low-cost BCDLite technology is reported. Clamp performance optimization through body PWELL engineering and device design techniques are investigated. A compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9c078c40351a7513392944e1634c29
https://doi.org/10.23919/ieds48938.2021.9468827
https://doi.org/10.23919/ieds48938.2021.9468827
Publikováno v:
2020 International EOS/ESD Symposium on Design and System (IEDS).
A HV NPN ESD devices is evaluated in a 130nm Power SOI technology. Current flow and temperature distribution under ESD stress is investigated by TCAD and a new device architecture without STI is proposed. Non-uniform triggering issue is also investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cefcf8ab52448a8450b45ba2bd978af
https://doi.org/10.23919/ieds48938.2021.9468844
https://doi.org/10.23919/ieds48938.2021.9468844
Publikováno v:
IRPS
A novel high voltage NPN (HV-NPN) device with buried floating P-type (BFP) implant at collector side was developed for electrostatic discharge (ESD) protection in a 130nm low cost high voltage CMOS technology. The characteristics of the novel HV-NPN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1a8923120f6a25a9609c2e0aa472ded
https://doi.org/10.1109/irps.2019.8720460
https://doi.org/10.1109/irps.2019.8720460
Autor:
Heui-Seung Lee, Kyong-Jin Hwang, Sung-Hyung Park, Jung-Eun Lim, In-Shik Han, Ook-Sang You, Won-Ho Choi, Hee-Hwan Ji, Hi-Deok Lee, Dae-Byung Kim
Publikováno v:
IEEE Transactions on Electron Devices. 55:1352-1358
This paper shows that dc device performance and reliability characteristics of CMOSFETs do not have the same dependence on the film stress of contact etch stopping layers (CESLs) in strained silicon technology. Two kinds of CESLs, namely, plasma-enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ee4fc53cd53673f05433baec5a564b9
https://doi.org/10.1109/ted.2008.921061
https://doi.org/10.1109/ted.2008.921061
Autor:
In-Shik Han, Hee-Hwan Ji, Ook-Sang You, Won-Ho Choi, Jung-Eun Lim, Kyong-Jin Hwang, Sung-Hyung Park, Heui-Seung Lee, Dae-Byung Kim, Hi-Deok Lee
Publikováno v:
IEEE Transactions on Electron Devices; Jun2008, Vol. 55 Issue 6, p1352-1358, 7p