Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Kyoichiro Asayama"'
Autor:
Koyu Asai, Kyoichiro Asayama, Koji Nakamae, Nobuyoshi Hattori, Yukinori Hirose, N. Murata, Keiichiro Kashihara, Shuichi Kudo, Toru Koyama, Kazuyoshi Maekawa, Tadashi Yamaguchi, Toshiharu Katayama
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 27:16-21
This is the first paper to reveal the formation mechanism of the abnormal growth of nickel silicide that causes leakage-current failure in complementary metal-oxide- semiconductor (CMOS) devices by using advanced transmission electron microscope (TEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::489c74e58470ce01486e9d71bab0e6de
https://doi.org/10.1109/tsm.2013.2284593
https://doi.org/10.1109/tsm.2013.2284593
Autor:
Ching Chun Lin, Noriaki Endo, Yukihito Kondo, Hsu Kim, Kei-ichi Fukunaga, Kyoichiro Asayama, Yoshitaka Aoyama
Publikováno v:
Microscopy and Microanalysis. 24:978-979
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7991c003e613e880bfc26c5257abdfc1
https://doi.org/10.1017/s143192761800538x
https://doi.org/10.1017/s143192761800538x
Direct observation of crystallization of HfO2 promoted on silicon surfaces in gate dielectric stacks
Autor:
Kyoichiro Asayama, Suhyun Kim, Nobue Nakajima, Yoshifumi Oshima, Naoto Hashikawa, Kunio Takayanagi
Publikováno v:
Thin Solid Films. 520:2562-2565
High-angle annular dark-field scanning transmission electron microscopy was used to investigate the crystallization mechanism of amorphous hafnium dioxide (HfO 2 ) layers in gate stacks (polysilicon/HfO 2 /SiON/Si substrate). A 0.9-nm-thick HfO 2 lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83e455ccae878c5643d9226b9d4541e7
https://doi.org/10.1016/j.tsf.2011.11.001
https://doi.org/10.1016/j.tsf.2011.11.001
Publikováno v:
Microscopy and Microanalysis. 15:106-113
We investigated the chemical shift of the electron energy-loss near-edge structure (ELNES) for the nitrogen K-edge and titanium L3-edge measured from the interface region between a titanium nitride layer and a titanium layer. Both the titanium nitrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cfd8a8078258b17d50a25b32d0519ef
https://doi.org/10.1017/s1431927609090175
https://doi.org/10.1017/s1431927609090175
Autor:
Tsuyohsi Ohnishi, Takahito Hashimoto, Takeo Kamino, Mitsuru Konno, Yasushi Kuroda, Kyoichiro Asayama, Toshie Yaguchi, Kaoru Umemura
Publikováno v:
Microscopy Today. 12:26-29
In characterization or failure analysis of new materials and semiconductor devices, the requirements for three dimensional observation and analysis are rapidly increasing. We discuss techniques for specimen preparation, three-dimensional observation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4cd2d31b960630fdffd8454a820e66e
https://doi.org/10.1017/s1551929500065937
https://doi.org/10.1017/s1551929500065937
Autor:
Toshie YAGUCHI, Takeo KAMINO, Takahito HASHIMOTO, Hidemi KOIKE, Tsuyohsi OHNISHI, Kyoichiro ASAYAMA
Publikováno v:
Journal of The Surface Finishing Society of Japan. 54:16-20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c50200cbc9476d726a3adec9ad8bd945
https://doi.org/10.4139/sfj.54.16
https://doi.org/10.4139/sfj.54.16
Publikováno v:
Japanese Journal of Applied Physics. 46:L528-L530
Transmission electron microscope (TEM) with electron energy loss spectroscopy (EELS) is an indispensable tool in developing the nickel silicide structures in transistors of 65 nm node or further. The low loss EELS is a simple method in discriminating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fd8bcb9e5a1add4163e26aeede08a29
https://doi.org/10.1143/jjap.46.l528
https://doi.org/10.1143/jjap.46.l528
Autor:
Eiji Taguchi, Kazuto Arakawa, Yoshifumi Oshima, Kyoichiro Asayama, Kiyokazu Yoshida, Hidehiro Yasuda, Ryuji Nishi, Takao Sakata
Publikováno v:
Microscopy (Oxford, England). 62(5)
We quantitatively analyzed the contrast degradation and blur of 20-nm gold nanoparticles adsorbed on the top of amorphous silicon films of thicknesses of 0.54, 1.09, 1.63 and 2.2 μm in bright-field transmission electron microscope (TEM) images taken
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a2dcb26f776f176252b6d159241bddf
https://pubmed.ncbi.nlm.nih.gov/23677968
https://pubmed.ncbi.nlm.nih.gov/23677968
Autor:
Akio Nishida, K. Eguchi, Masao Inoue, Koji Nakamae, Shuichi Kudo, K. Funayama, Yukinori Hirose, Nobuyoshi Hattori, Kyoichiro Asayama, K. Ohgata, Toru Koyama
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
A detailed structural analysis of Hf-doped SiON dielectrics was performed by using advanced physical analysis techniques: Cs-corrected scanning transmission electron microscopy (STEM) and three-dimensional (3-D) atom-probe (AP) tomography. We confirm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7122d69de181bb1f069ef71f99ba8804
https://doi.org/10.1109/irps.2013.6532025
https://doi.org/10.1109/irps.2013.6532025
Autor:
Kyoichiro Asayama, Toshiaki Yamanaka, Kenichi Ishibashi, Atsuyoshi Koike, Kunihiro Komiyaji, Koichi Motohashi, Shuji Ikeda, Toshiro Aoto, Fumio Kojima, Haruhito Iida, Naotaka Hashimoto, Sadayuki Morita, Katsuro Sasaki
Publikováno v:
IEEE Journal of Solid-State Circuits. 29:411-418
A 16-Mb CMOS SRAM using 0.4-/spl mu/m CMOS technology has been developed. This SRAM features common-centroid-geometry (CCG) layout sense amplifiers which shorten the access time by 2.4 ns. A flexible redundancy technique achieves high efficiency with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53e77d877ad38070f5b723e20fb0c401
https://doi.org/10.1109/4.280689
https://doi.org/10.1109/4.280689