Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kyo Se Choi"'
Autor:
Byung Lyul Park, Ja Hyung Han, Young Jae Kang, Ja Eung Koo, Kyo Se Choi, Sun Yong Lee, Sang Rok Hah, Jin-Goo Park, Ju Hyuk Chung
Publikováno v:
Solid State Phenomena. 134:295-298
The prevention of watermark defect after copper/low-k CMP is a critical barrier for the successful integration of sub-100 nm devices. The water-mark can act as a leakage source and cause electrical shorts. The mechanism of water-mark formation during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1584d14d1e729c76e6bef3316b39d154
https://doi.org/10.4028/www.scientific.net/ssp.134.295
https://doi.org/10.4028/www.scientific.net/ssp.134.295
Autor:
William Ward, Vlasta Brusic, Paul M. Feeney, Jeffrey Dysard, Kevin Moeggenborg, Glenn Whitener, Gregory Burns, Kyo-Se Choi, Steven K. Grumbine
Publikováno v:
ECS Meeting Abstracts. :1469-1469
In order to enable high-k metal gate technology, new CMP steps and slurries are needed to meet the stringent planarity and defect requirements for device performance. This paper will describe several of these slurry technologies in detail, including
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb5c65e20cdf8d2ebde5621df53fa390
https://doi.org/10.1149/ma2010-02/21/1469
https://doi.org/10.1149/ma2010-02/21/1469