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pro vyhledávání: '"Kyle Brumfield"'
Feasibility of avian antibodies as prophylaxis against enterotoxigenic escherichia coli colonization
Autor:
Kyle Brumfield, Hyesuk Seo, Nnebuefe Idegwu, Chad Artman, Laura Gonyar, James Nataro, Weiping Zhang, David Sack, James Geyer, Julius Goepp
Publikováno v:
Frontiers in Immunology, Vol 13 (2022)
BackgroundThis research aims to evaluate the feasibility of using avian immunoglobulins (IgY) raised against adhesion factors of enterotoxigenic Escherichia coli (ETEC) as prophylaxis of diarrheal illness caused by these pathogens. ETEC requires adhe
Externí odkaz:
https://doaj.org/article/d22d0d340e5a4aca94f623937bf22f4c
Autor:
Mayank Gangwar, Kyle Brumfield, Moiz Usmani, Yusuf Jamal, Antar Jutla, Anwar Huq, Rita Colwell
Vibrio spp. is typically found in salty waters and is indigenous to coastal environments. V. vulnificus and V. parahaemolyticus frequently causes food-borne and non-food-borne infections in the United States. Vibrio spp. is sensitive to changes in en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99e62adcb3f51ff76b51c8d67b7b14d9
https://doi.org/10.5194/egusphere-egu23-593
https://doi.org/10.5194/egusphere-egu23-593
Autor:
Nick McLean, Kyle Brumfield, Allen McTeer, Lequn Liu, Vladimir Mikhalev, Shu Qin, Mike Irwin, Michael A. Smith, Michael Evans, Y. Jeff Hu
Publikováno v:
2014 IEEE Workshop On Microelectronics And Electron Devices (WMED).
In this paper, we demonstrate that high voltage NMOS is very sensitive to LDD implant process conditions. With the same implant energy and dose, high voltage NMOS channel punch through BVDSS tail is strongly toggled by critical implant process parame
Publikováno v:
AIP Conference Proceedings.
Plasma doping (PLAD) shows very different impurity profiles compared to the conventional beam-line-based ion implantations due to its non-mass separation property and plasma environment. There is no simulation for PLAD process so far due to a lack of
Autor:
Lequn Liu, Radha Padmanabhan, Wendy Morinville, Shu Qin, Kyle Brumfield, Wei Hui Hsu, Yongjun Jeff Hu, Allen McTeer
Publikováno v:
AIP Conference Proceedings.
The effects of self-amorphization thickness on boron (B) dopant depth profile in silicon (Si) were investigated by cold temperature implant, down to −100°C. Significant B junction depth (Xj) reduction can be achieved for as-implant and post anneal