Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Kyeong-Keun Choi"'
Autor:
Jongseo Park, Kyeong-Keun Choi, Jehyun An, Bohyeon Kang, Hyeonseo You, Giryun Hong, Sung-Min Ahn, Rock-Hyun Baek
Publikováno v:
IEEE Access, Vol 11, Pp 60660-60667 (2023)
We fabricated Al/Al2O3/SiO2/Si and Al/HfO2/Si structures to optimize the passivation layer of a backside-illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor (CIS), with the key properties of the newly developed high- $k$ pas
Externí odkaz:
https://doaj.org/article/e07b7f67fbd54e48a5593a29775e33d9
Autor:
Ruhan E. Ustad, Vijay D. Chavan, Honggyun Kim, Min-ho Shin, Sung-Kyu Kim, Kyeong-Keun Choi, Deok-kee Kim
Publikováno v:
Nanomaterials, Vol 13, Iss 19, p 2642 (2023)
Photosensitive polyimides (PSPIs) have been widely developed in microelectronics, which is due to their excellent thermal properties and reasonable dielectric properties and can be directly patterned to simplify the processing steps. In this study, 3
Externí odkaz:
https://doaj.org/article/e5c97fa353e3408fb71d3ba80415d971
Autor:
Honggyun Kim, Vijay D. Chavan, Jamal Aziz, Byoungsu Ko, Jae-Sung Lee, Junsuk Rho, Tukaram D. Dongale, Kyeong-Keun Choi, Deok-Kee Kim
Publikováno v:
IEEE Access, Vol 10, Pp 68724-68730 (2022)
The surface passivation of a CMOS image sensor (CIS) is highly beneficial for the overall improvement of a device performance. We employed the thermal atomic layer deposition (T-ALD) and plasma enhanced (PE-ALD) techniques for the deposition of 20 nm
Externí odkaz:
https://doaj.org/article/fb50d026caf04423a1a60a323b801b09
Autor:
Muhammad Hussain, Woonyoung Jeong, Il-Suk Kang, Kyeong-Keun Choi, Syed Hassan Abbas Jaffery, Asif Ali, Tassawar Hussain, Muhammad Ayaz, Sajjad Hussain, Jongwan Jung
Publikováno v:
Sensors, Vol 21, Iss 4, p 1042 (2021)
Herein, the fabrication of a novel highly sensitive and fast hydrogen (H2) gas sensor, based on the Ta2O5 Schottky diode, is described. First, Ta2O5 thin films are deposited on silicon carbide (SiC) and silicon (Si) substrates via a radio frequency (
Externí odkaz:
https://doaj.org/article/e8d6468888a740c9b0acbd9ef0a8956a
Publikováno v:
Journal of Manufacturing Processes. 84:531-538
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba2545be2c6226372969dd923eebdfd5
https://doi.org/10.1016/j.jmapro.2022.10.021
https://doi.org/10.1016/j.jmapro.2022.10.021
Publikováno v:
Materials Science in Semiconductor Processing. 161:107451
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a45767df60b43054adeb4d3c6b8ff5a
https://doi.org/10.1016/j.mssp.2023.107451
https://doi.org/10.1016/j.mssp.2023.107451
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:4394-4399
In this paper, we investigated TiO2 as gate dielectric to achieve the large dielectric constant. The ultra high-k value over 30 was obtained by Capacitance–Voltage measurement of Al/Ti/TiO2/Si Metal-Insulator–Semiconductor (MIS) capacitor. Among
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6fdb75eb77b0a51993207f12978671f
https://doi.org/10.1166/jnn.2021.19420
https://doi.org/10.1166/jnn.2021.19420
Corrosion Protection Characteristics of Reduced Graphene Oxide Composites in Microelectronic Devices
Autor:
Kyeong-Keun Choi, Sung Il Ahn
Publikováno v:
Transactions on Electrical and Electronic Materials. 21:606-611
This study investigates the effects of the corrosion protection and temperature coefficient of resistivity (TCR) properties of poly-vinyl-alcohol (PVA)/graphene oxide (GO) composites on the zinc substrate and copper (Cu) damascene interconnects. As t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::727bee7e6c2b37fb2eaf4e6095e74223
https://doi.org/10.1007/s42341-020-00231-x
https://doi.org/10.1007/s42341-020-00231-x
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 15:904-908
Synchrotron radiation transmission X-ray microscopy (SRTXM) was applied for visualization of the interfacial layer in bonded wafer pairs. The X-ray energy of 6.54 keV with a monitoring window was utilized to enhance a resolution of transmission X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0234701db0d45666672ddb4571d0e31a
https://doi.org/10.1166/jno.2020.2770
https://doi.org/10.1166/jno.2020.2770