Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kye-hee Yeom"'
Autor:
Jinman Chang, Kyu-Pil Lee, Tae-Heon Kim, Hyeongsun Hong, Kye-hee Yeom, Kyusun Lee, Aeran Hong, Yong-Hyeon Kim, Kweonjae Lee, Joosung Lee, Jinyoung Kang, Joo-young Lee, Bumjin Choi, Gyo-Young Jin, Daehan Han
Publikováno v:
SPIE Proceedings.
Starting with the sub 2Xnm node, the process window becomes smaller and tighter than before. Pattern related error budget is required for accurate critical-dimension control of Cell layers. Therefore, lithography has been faced with its various diffi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35403c0d3bae37ad232e2e2e18bc6eaf
https://doi.org/10.1117/12.2085004
https://doi.org/10.1117/12.2085004
Autor:
Byoung Hun Lee, Gi-ho Cha, Kye-hee Yeom, Joon-hee Lee, Woo-Tag Kang, Yun-Gi Kim, Kyu-Charn Park, Sang-Cheol Lee, Chang-Gyu Hwang, Tae-Earn Shim, Duck-Hyung Lee, Sunil Yu, Sang-In Lee, Il-Kwon Kim
Publikováno v:
International Electron Devices Meeting. Technical Digest.
A fully planarized 16 Mb SOI DRAM has been successfully fabricated featuring pattern-bonded SOI (PBSOI), CMP processes, STI (Shallow Trench Isolation) and the silicon-on-capacitor (SOC) structure with 0.3 um technology using i-line lithography. The f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e635a0c760ad0531237f2ba5d7439d6
https://doi.org/10.1109/iedm.1996.554056
https://doi.org/10.1109/iedm.1996.554056