Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Kye-Hwan Oh"'
Preparation and properties of amorphous TiO2 thin films by plasma enhanced chemical vapor deposition
Publikováno v:
Thin Solid Films. 237:105-111
Titanium dioxide (TiO2) thin films were prepared on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using Ti(OiC3H7)4 and oxygen. PECVD of TiO2 films has been evaluated with various process parameters. The characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16718038d3bee609627e2e687613bacb
https://doi.org/10.1016/0040-6090(94)90245-3
https://doi.org/10.1016/0040-6090(94)90245-3
Publikováno v:
Materials Chemistry and Physics. 35:134-138
Etching of the bottom resist layer in a tri-level resist (TLR) process has been investigated in a magnetically enhanced reactive ion etcher (MERIE). It was found that the addition of Ar to an O 2 plasma is effective for obtaining an anisotropic etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e00830a2e630fbda16180b2d8ad4d2cd
https://doi.org/10.1016/0254-0584(93)90188-r
https://doi.org/10.1016/0254-0584(93)90188-r
Publikováno v:
1993 IEEE International Symposium on Circuits and Systems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc82fc11dcbf16f904b5e4910611cca0
https://doi.org/10.1109/iscas.1993.692896
https://doi.org/10.1109/iscas.1993.692896
Autor:
Ji-Hyung Chung, Ki-Soo Hwang, D. Jensen, K.Y. Chang, H. Lin, Hun-Sub Park, V. Kundaji, Kye-Hwan Oh, R. Rao
Publikováno v:
Sixth Annual IEEE International ASIC Conference and Exhibit.
In the multi-process environment, a library vendor has to port libraries to foundries using different processes. Technology match between the library and the process becomes necessary, in addition to software compatibility. Typical issues are design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e5b6e04541af9f969f65ef0c4717c44
https://doi.org/10.1109/asic.1993.410730
https://doi.org/10.1109/asic.1993.410730
Autor:
Hoi-Jun Yoo, Seung-Jun Lee, Kee-Woo Park, Chang-Ho Chung, Kye-Hwan Oh, Sang-Ho Shin, Ki-Hong Park, Jeong-Dong Han, Seok-Tae Kim, Jin-Seung Son, Wi-Sik Min
Publikováno v:
Digest of Technical Papers., Symposium on VLSI Circuits..
A 32 bit-wide 256 M synchronous DRAM (SDRAM) has been developed. The major design effort has been focused on minimizing the operating current at high clock frequencies to suppress power-line bouncing. The key techniques are split-bank architecture, m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70917371b3c17f00cba84ce9fed85536
https://doi.org/10.1109/vlsic.1995.520711
https://doi.org/10.1109/vlsic.1995.520711
Autor:
Hoi-Jun Yoo, Chang-Ho Chung, Hak-Jun Oh, Ki-Hong Park, Jin-Seung Son, Wi-Sik Min, Kee-Woo Park, Kye-Hwan Oh, Seung-Jun Lee, Jeong-Dong Han, Ki-Won Kwon
Publikováno v:
Proceedings ISSCC '95 - International Solid-State Circuits Conference.
A 256 Mb synchronous DRAM with 8 banks of 32 Mb arrays introduces (1) post charge logic in the critical timing paths, (2) a wave pipelining in the data path and (3) hierarchical I/O architecture. This simplifies the latency control and leads to a ful
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b78a3714beb807c4b66deda24fb75a1b
https://doi.org/10.1109/isscc.1995.535543
https://doi.org/10.1109/isscc.1995.535543
Publikováno v:
Applied Physics Letters. 63:2511-2513
PbTiO3 thin films on the Si substrates were prepared by plasma enhanced chemical vapor deposition (PECVD) using Ti(O‐i‐C3H7)4, Pb(C2H5)4, and oxygen. The composition of PECVD PbTiO3 thin films was intensively influenced by the input flow rate rat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d79466f1264e044e2ed2d48faa217b2e
https://doi.org/10.1063/1.110465
https://doi.org/10.1063/1.110465
Publikováno v:
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40375a941c729279869f26279e2c6cc6
https://doi.org/10.7567/ssdm.1991.pc1-2
https://doi.org/10.7567/ssdm.1991.pc1-2
Autor:
Chang, K.Y., Rao, R., Kundaji, V., Ji-Hyung Chung, Hun-Sub Park, Ki-Soo Hwang, Kye-Hwan Oh, Lin, H., Jensen, D.
Publikováno v:
Sixth Annual IEEE International ASIC Conference & Exhibit; 1993, p320-325, 6p