Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Kye Hyun Kyung"'
Autor:
HyunWook Park, Doohyun Kim, Jae Doeg Yu, Hyun-Jun Yoon, Jonghoon Park, Kye-Hyun Kyung, Hyung-Gon Kim, Jinbae Bang, Chulbum Kim, Jeong-Don Ihm, Yong-Ha Park, Seung-Bum Kim, Woopyo Jeong, Hwajun Jang, Ji-Young Lee, Il Han Park, Nahyun Kim, Pansuk Kwak, Yang-Lo Ahn, Ki-Tae Park, Jong-Hoon Lee, Sanggi Hong, Hyun-Jin Kim, Park Jiyoon, Dae Seok Byeon, Jin-Yub Lee, Young-don Choi, Moosung Kim, Nayoung Choi, Seung-Hwan Song
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:124-133
A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory is presented. After briefly examining the challenges that occur to a stack, several technologies are suggested to resolve the issues. For performance enhancement, a novel program method hid
Autor:
Jaedoeg Yu, Kyung-Tae Kang, Jin-Yup Lee, Hyung-Gon Kim, Doo-Sub Lee, Jeong-Don Ihm, Young-Sun Min, An-Soo Park, Chulbum Kim, Jinho Ryu, Dongku Kang, Pansuk Kwak, Doohyun Kim, Kyung-Min Kang, Sung-Yeon Lee, Yong Sung Cho, Moosung Kim, Wandong Kim, Lee Han-Jun, Cheon An Lee, In-Mo Kim, Bong-Kil Jung, Woopyo Jeong, Jae-Ick Son, Nayoung Choi, Ki-Tae Park, Kye-Hyun Kyung, Dae-Seok Byeon, Dong-Su Jang
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:210-217
A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented. Several vertical scale-down effects such as deteriorated WL loading and variations are discussed. To enhance performance, reverse read scheme and variable-pulse scheme
Autor:
Dongku Kang, Minsu Kim, Su Chang Jeon, Wontaeck Jung, Jooyong Park, Gyosoo Choo, Dong-kyo Shim, Anil Kavala, Seung-Bum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun-Wook Park, Byung-Jun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyunjin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Youngsun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-ghee Hahn, Ki-sung Kim, Kyungmin Kim, Euisang Yoon, Won-Tae Kim, Inryoul Lee, Seung hyun Moon, Jeongdon Ihm, Dae Seok Byeon, Ki-Whan Song, Sangjoon Hwang, Kye Hyun Kyung
Publikováno v:
ISSCC
Data storage is one of the hottest discussion topics in today’s connected world. The amount of data growth is expected to be exponential, while budget and space remain constricted. Since the transformation of storage device from planar NAND to 3D V
Autor:
Jeong-Hyuk Choi, Jinho Ryu, Sang-Won Park, Myung-Hoon Choi, Hyang-ja Yang, Dae-Han Kim, Kye-Hyun Kyung, Donghun Kwak, Kitae Park, Dae-Seok Byeon, Jeong-Don Ihm, Jae-Hoon Jang, Moosung Kim, Kyung-Tae Kang, Doo-Sub Lee, Dongkyo Shim, Ji-Ho Cho, Wook-Ghee Hahn, You-Se Kim, Sang-Won Shim, Jae-Woo Im, Sang-Won Hwang, In-Mo Kim, Hyun-Jun Yoon, Doohyun Kim, Woopyo Jeong, Sang-Wan Nam, Seok-Min Yoon, HyunWook Park
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:204-212
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as shorter tPROG, lower power consumption and higher endurance. For many years, every effort has been made to shrink die si
Autor:
Ki-whan Song, Gyo Soo Choo, Kitae Park, Kye-Hyun Kyung, Dae-Seok Byeon, Jisu Kim, Jinbae Bang, Moosung Kim, Lee Kang-Bin, Lee Han-Jun, Seung-Bum Kim, Seonyong Lee, Minyeong Lee, Sung-Min Joe, Jinwon Choi, Jonghoo Jo, Kyung Min Kim, Chulbum Kim, Jeong-Don Lim, Young-Sun Min, Young-don Choi, Joon-Suc Jang, Dongjin Shin, Nahyun Kim, Rho Young-Sik, Park Jiyoon, Jungkwan Kim, Hwajun Jang, Yong-Ha Park, Deokwoo Lee, Young-Hwan Ryu, SeonGeon Lee, Yu Chung-Ho, Ho-joon Kim, Minseok Kim, Jonghoon Park, Hyun-Jin Kim, Seung-Hyun Moon, Seung-jae Lee, Cheon An Lee, Sohyun Park, Minsu Kim
Publikováno v:
ISSCC
Since the first demonstration of a production quality three-dimensional (3D) stacked-word-line NAND Flash memory [1], the 3b/cell 3D NAND Flash memory has seen areal density increases of more than 50% per year due to the aggressive development of 3D-
Autor:
Joonsoo Kwon, Hyun-Jun Yoon, Sung-Jun Kim, Dong-Kyu Youn, Jeung-Hwan Park, Kyungwa Yun, Doo-Sub Lee, Dongkyo Shim, HyunWook Park, Sang-Won Shim, Yang-Lo Ahn, Sang-Won Park, Doohyun Kim, Lee Kang-Bin, Hyung-Gon Kim, Kihwan Choi, Seung Hoon Shin, Jeong-Hyuk Choi, Taehyun Kim, Hyang-ja Yang, Ko Kuihan, Dae-Han Kim, Jinho Ryu, Woon-kyung Lee, Dae-Seok Byeon, Yoon-He Choi, Jinseon Yeon, Myong-Seok Kim, Han-soo Kim, Dong-Hyun Kim, Min-Su Kim, Donghun Kwak, Jinman Han, Won-Tae Kim, Kyung-Min Kang, Jae-Hoon Jang, Sang-Wan Nam, Kye-Hyun Kyung, Kitae Park, Moosung Kim, Pansuk Kwak, Myung-Hoon Choi, Du-Heon Song, Sungwhan Seo, Sung-Soo Lee
Publikováno v:
ISSCC
In the past few years, various 3D NAND Flash memories have been demonstrated, from device feasibility to chip implementation, to overcome scaling challenges in conventional planar NAND Flash [1-3]. The difficulties include shrinking the NAND cell and
Autor:
Yunhee Choi, Jindo Byun, Bong-Kil Jung, Hyeonggon Kim, Dae-Seok Byeon, Sung-Hoon Kim, Ki-Sung Kim, Yena Lee, Chang-Bum Kim, Chan-Jin Park, Han-Sung Joo, Jaehwan Kim, Young-don Choi, Hyun-Jin Kim, Seungwoo Yu, Nahyun Kim, Jin-Yub Lee, Youngmin Jo, Anil Kavala, Lee Jangwoo, Kye-Hyun Kyung, Jeong-Don Ihm, Kwang-won Kim, Daehoon Na, Pansuk Kwak, Park Jung-June, Kitae Park
Publikováno v:
2017 Symposium on VLSI Circuits.
A 1.2 V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package incorporating 16-die stacked 512-Gb NAND flash memories and F-Chip is presented. To meet the performance requirements of storage devices for higher capacity and faster data throughput, the
Autor:
Dae-Woon Kang, Chunan Lee, Jin-Yub Lee, Hyung-Gon Kim, Kitae Park, HyunWook Park, Moosung Kim, Sangki Hong, Sung-Hoon Lee, Kye-Hyun Kyung, Jeong-Don Ihm, In-Mo Kim, Inryul Lee, Ji-Young Lee, Ji-Sang Lee, Hyun-Jun Yoon, Seung-Hwan Song, Dongkyu Yoon, Young-don Choi, Yelim Kwon, Yong-Ha Park, Sung-Hoon Kim, Ji-Ho Cho, Jaedoeg Yu, Park Jiyoon, Doohyun Kim, Nayoung Choi, Nahyun Kim, Chulbum Kim, Pansuk Kwak, Hyun-Jin Kim, Jong-Hoon Lee, Woopyo Jeong, Hwajun Jang, Jonghoon Park, Byung-Hoon Jeong, Won-Tae Kim, Young-Sun Min, Yang-Lo Ahn, Ki-Sung Kim, Seung-Bum Kim, Dae-Seok Byeon, Jinbae Bang, Park Il-Han
Publikováno v:
ISSCC
The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In the era of big data, storage devices with versatile characteristics are required for ultra
Autor:
Kye-Hyun Kyung, Pansuk Kwak, Jeong-Hyuk Choi, Jinho Ryu, Young-Sun Min, Nayoung Choi, Hyung-Gon Kim, Dae-Seok Byeon, Doohyun Kim, Jeong-Don Ihm, Hyang-ja Yang, Yong Sung Cho, Jaedoeg Yu, Dong-Su Jang, Kyung-Tae Kang, In-Mo Kim, Bong-Kil Jung, Wandong Kim, Kyung-Min Kang, Chulbum Kim, Dongku Kang, Kitae Park, Sung-Yeon Lee, Moosung Kim, Lee Han-Jun, Woopyo Jeong, An-Soo Park, Jae-Ick Son, Doo-gon Kim, Doo-Sub Lee
Publikováno v:
ISSCC
Today's explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the introduction of 3D technology in 2014 [1], V-NAND is believed to be a successful alternative to pl
Autor:
Dae-Seok Byeon, Kyung-Hwa Kang, Yongsu Choi, Jeon Hongsoo, Hyung-Gon Kim, Minseok Kim, Jeong-Don Ihm, Seon-Kyoo Lee, Kye-Hyun Kyung, Sungwhan Seo, Sung-Min Joe, Jin-Yub Lee, Su-Chang Jeon, Kitae Park, Byung-Hoon Jeong, HyunWook Park, Moosung Kim, Kim Su-Yong, Sung-Won Yun, Sangbum Yun, Young-Min Kim, Park Jiyoon, Hyang-ja Yang, Jong-Hoon Lee, Yong-Sik Yim, Sungkyu Jo, Byung-Kyu Cho, Hyejin Yim, Makoto Hirano, Jonghoon Park, Tae-eun Kim, Deok-kyun Woo, Lee Kang-Bin, Chan-Ho Kim, Hoosung Kim, Jongyeol Park, Jung-no Im, Yang-Lo Ahn, Seung-jae Lee, Jeong-Hyuk Choi, Park Il-Han, Minsu Kim, Jin-Tae Kim, Dooho Cho, Ho-Kil Lee
Publikováno v:
ISSCC
NAND flash memory is widely used as a cost-effective storage with high performance [1–2]. This paper presents a 128Gb multi-level cell (MLC) NAND flash memory with a 150 cells/string structure in 14nm CMOS that can be used as a cost-effective stora