Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Kwon-Chil Kang"'
Publikováno v:
Journal of the Korean Physical Society. 60:108-112
For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:5618-5622
A single-electron transistor (SET) is one of the promising solutions to overcome the scaling limit of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Up to now, various kinds of SETs are being proposed and SETs with a dual gate (DG) s
Autor:
Byung-Gook Park, Joung-Eob Lee, Dong Seup Lee, Seongjae Cho, Hong-Seon Yang, Kwon-Chil Kang, Jung Han Lee
Publikováno v:
IEICE Transactions on Electronics. :540-545
We propose a gate-all-around tunnel field effect transistor (GAA TFET) having a n-doped layer at the source junction and investigate its electrical characteristics with device simulation. By introducing the n-doped layer, band-to-band tunneling area
Autor:
Sangwoo Kang, Kwon-Chil Kang, Jong Duk Lee, Joung-Eob Lee, Dong Seup Lee, Jung Hoon Lee, Kwan-Jae Song, Byung-Gook Park, Dong Myong Kim
Publikováno v:
IEEE Transactions on Nanotechnology. 8:492-497
Single-electron transistors that have electrical tunneling barriers are fabricated, and Coulomb oscillation peaks and negative differential transconductance are observed at room temperature (300 K). Operation characteristics and multioscillation peak
Autor:
Kwon-Chil Kang, Joung-Eob Lee, Dong Seup Lee, Seongjae Cho, Sangwoo Kang, Hong-Seon Yang, Jung Han Lee, Byung-Gook Park, Jong Duk Lee, Sang Hyuk Park
Publikováno v:
IEICE Transactions on Electronics. :647-652
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced.
Autor:
Kwon Chil Kang, Sangwoo Kang, Kyung Rok Kim, Jung Im Huh, Byung-Gook Park, Jong Duk Lee, Jin Ho Kim, Ki-Whan Song, Seung-Hwan Song
Publikováno v:
IEEE Transactions on Nanotechnology. 5:192-200
In the room-temperature I-V characteristics of field-induced interband tunneling-effect transistors (FITETs), negative-differential conductance (NDC) characteristics as well as negative-differential transconductance (NDT) characteristics have been ob
Autor:
Byung-Gook Park, Kwon-Chil Kang, Wandong Kim, Jung Han Lee, Kyung Wan Kim, Hyun-Woo Kim, Joo Yun Seo
Publikováno v:
2011 International Semiconductor Device Research Symposium (ISDRS).
Modern VLSI technology has been developed with continuous scaling of MOSFET. However, as MOSFET has been scaled down, a lot of critical issues have risen and resulted in a considerable degradation of individual devices [1]. On the other hand, owing t
Autor:
Jung Han, Lee, Dong Hua, Li, Joung-Eob, Lee, Kwon-Chil, Kang, Kyungwan, Kim, Byung-Gook, Park
Publikováno v:
Journal of nanoscience and nanotechnology. 11(7)
A single-electron transistor (SET) is one of the promising solutions to overcome the scaling limit of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Up to now, various kinds of SETs are being proposed and SETs with a dual gate (DG) s
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Autor:
Won-Bo Shim, J. H. Lee, Kwon-Chil Kang, Hyopil Shin, Joon-Sik Lee, Byeoung-Soo Park, Jang-Gn Yun
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.