Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Kwon Shik Park"'
Autor:
Taikyu Kim, Cheol Hee Choi, Pilgyu Byeon, Miso Lee, Aeran Song, Kwun-Bum Chung, Seungwu Han, Sung-Yoon Chung, Kwon-Shik Park, Jae Kyeong Jeong
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-7 (2022)
Abstract Achieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable
Externí odkaz:
https://doaj.org/article/a4f9b25abff5445eaa93da8dcbffa308
Autor:
Min Hoe Cho, Min Jae Kim, Hyunjoo Seul, Pil Sang Yun, Jong Uk Bae, Kwon-Shik Park, Jae Kyeong Jeong
Publikováno v:
Journal of Information Display, Vol 20, Iss 2, Pp 73-80 (2019)
This paper reports the effect of the cation composition on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) where atomic layer deposition (ALD) was used to deposit an a-IGZO channel layer. The In0
Externí odkaz:
https://doaj.org/article/201e45034c42485c9335153b465ac9ce
Autor:
Taikyu Kim, Cheol Hee Choi, Se Eun Kim, Jeong-Kyu Kim, Jaeman Jang, SeungChan Choi, Jiyong Noh, Kwon-Shik Park, Jeomjae Kim, SooYoung Yoon, Jae Kyeong Jeong
Publikováno v:
IEEE Electron Device Letters. 44:269-272
Autor:
Tae Jun Yang, Je-Hyuk Kim, Chang II Ryoo, Seung Joo Myoung, Changwook Kim, Ju Heyuck Baeck, Jong-Uk Bae, Jiyong Noh, Seok-Woo Lee, Kwon-Shik Park, Jeom-Jae Kim, Soo-Young Yoon, Yoon Kim, Dae Hwan Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:121-126
Autor:
Kummi Oh, Sun-Wook Ko, Deuk-Ho Yeon, Tae-Hyoung Moon, Kwon-Shik Park, Jeom-Jae Kim, Soo-Young Yoon
Publikováno v:
SID Symposium Digest of Technical Papers. 53:314-317
Autor:
YounGyoung Chang, Youngjin Yi, Hanseok Lee, JinPil Kim, JungJune Kim, Soyang Choi, Jihwan Jung, Yubeen Lim, Kwon-Shik Park, JeomJae Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 53:82-85
Autor:
Jaeho Yoon, Soyoung Kim, Moon-Soo Kang, Chul-Sang Shin, Hoon Jeong, Kwon-Shik Park, Jeong-Ki Park, Hyung-Seok Choi
Publikováno v:
SID Symposium Digest of Technical Papers. 53:1160-1163
Autor:
Sun-Kyung Cha, Seongil Im, Yong-Sung Kim, Juheyuck Baeck, Jiyong Noh, Kwon-Shik Park, Jeom Jae Kim, Soo-Young Yoon
Publikováno v:
ACS Applied Electronic Materials. 4:2545-2551
Autor:
Yong Ho Jang, Kwang Il Chun, Younghyun Ko, Uyhyun Choi, Min-Gu Kang, Hyung Joon Koo, Seung Chan Choi, Dae Hwan Kim, Jiyong Noh, Kwon-shik Park
Publikováno v:
ITE Transactions on Media Technology and Applications. 10:152-158
Autor:
Jin-Seong Park, Jeom-Jae Kim, Ju-Hwan Han, Woojin Jeon, Soo Young Yoon, Kwon-Shik Park, Noh Jiyong, Jaeman Jang, Wan-Ho Choi, Seok-Goo Jeong, KyoungRok Kim
Publikováno v:
IEEE Transactions on Electron Devices. 68:6147-6153
Atomic layer deposition (ALD) has been studied extensively to employ oxide semiconductor thin film transistor (TFT) including both active layer and gate insulator (GI). Herein, we developed an ALD sandwich structure, which deposits both semiconductor