Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kwok Y. Wong"'
Autor:
Matthew R. Hickey, Bharat P. Patel, Zhiwei Guo, Michael Kwok Y. Wong, Xinhua Qian, Animesh Goswami
Publikováno v:
Organic Process Research & Development. 18:774-780
Diacid formation is a major problem in the conventional chemical hydrolysis of a diester to a monoester. Enzyme-catalyzed hydrolysis of dimethyl bicyclo[2.2.1]heptane-1,4-dicarboxylate (1) by lipases from Candida antarctica and Burkholderia cepacia g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6867a84b43dc2284986402c9b706460f
https://doi.org/10.1021/op400254c
https://doi.org/10.1021/op400254c
Autor:
Edmund K. Banghart, David Newell Nichols, Eric G. Stevens, Kwok Y. Wong, John P. Shepherd, Eric J. Meisenzahl
Publikováno v:
Digital Photography
This paper describes the design and performance of two new high-resolution full-frame architecture CCD imaging devices for use in professional color, digital still-imaging applications. These devices are made using 6.8 μm pixels and contain a dual-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a519c2da6b024de3a5bef1ba576931ac
https://doi.org/10.1117/12.651672
https://doi.org/10.1117/12.651672
Autor:
Teh-Hsuang Lee, Win-Chyi Chang, B.C. Burkey, Kwok Y. Wong, G. R. Moore, David L. Losee, R.P. Khosla
Publikováno v:
International Symposium on VLSI Technology, Systems and Applications.
The authors have developed an ultra-high-resolution, full-frame CCD imager of 2048*2048 pixels. The pixel size is 9 mu m*9 mu m. The sensor has dual readout registers to increase the data rate. It is designed for a horizontal clock rate of 20 MHz. Wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334e66e03b87092e78ddc6f34534d11b
https://doi.org/10.1109/vtsa.1989.68578
https://doi.org/10.1109/vtsa.1989.68578
Autor:
Kwok Y. Wong, Eric G. Stevens, William Des Jardin, Stephen L. Kosman, Eric J. Meisenzahl, Joseph E. Shepherd, Win-Chyi Chang
Publikováno v:
SPIE Proceedings.
This paper describes the performance of an advanced high- resolution full-frame architecture CCD imaging device for use in scientific, medical, and other high performance monochromatic digital still imaging applications. Of particular interest is the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::382070e26f7c4c218e5f5686503bdb39
https://doi.org/10.1117/12.371090
https://doi.org/10.1117/12.371090
Publikováno v:
SPIE Proceedings.
High-resolution solid-state image sensors have become readily available due to continuing advances in VLSI technology. The authors have developed a 1.6 megapixel full-frame CCD image sensor (KAF-1600) with a 3:2 aspect ratio to meet industrial and sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83cef499b2e463b8fc942f2c6e932db5
https://doi.org/10.1117/12.45332
https://doi.org/10.1117/12.45332
Autor:
Stuart Brickman, Kwok Y. Wong, Paul H. Sorlie, D. Rockafellow, James P. Lavine, R.P. Khosla, Michael B. Elzinga, Timothy J. Tredwell, Shozo Yoshizumi, Stanley Refermat, Bryan L. Howe, William Des Jardin, Edward T. Nelson
Publikováno v:
SPIE Proceedings.
A 640 x 486 pixel monolithic focal plane array detector using PtSi Schottky barrier photodiodes was developed. This detector uses 1.2-micron design rules to achieve a 54-percent fill factor with 25-micron square pixels. The detector array used an int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23ba6c319ab293a107461ff0ee6daf57
https://doi.org/10.1117/12.21715
https://doi.org/10.1117/12.21715
Autor:
Wesley A. Miller, Win-Chyi Chang, B.C. Burkey, Georgia R. Torok, Tom H. Lee, R.P. Khosla, Kwok Y. Wong
Publikováno v:
Charge-Coupled Devices and Solid State Optical Sensors.
An ultra high resolution image sensor has been developed for industrial and scientific applications. The ultra high resolution sensor is a full-frame CCD sensor, consisting of 2048 x 2048 pixels, and its image area measures 18.43 mm x 18.43 mm. The p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f7739b356985e31cc5dafb2f8e437e6
https://doi.org/10.1117/12.19427
https://doi.org/10.1117/12.19427
Publikováno v:
IEEE Journal of Solid-State Circuits. 20:489-494
Isolated vertical n-p-n transistors were fabricated by a modified 5-/spl mu/m n-well CMOS process. The modification included a decrease in the p/SUP +/ source and drain implant dose and an increase in the final anneal time, but no extra processing st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d18d7c4f7ff16ef6cacd3f92300f4e78
https://doi.org/10.1109/jssc.1985.1052334
https://doi.org/10.1109/jssc.1985.1052334
Autor:
Constantine N. Anagnostopoulos, Edward T. Nelson, James P. Lavine, David Newell Nichols, Kwok Y. Wong
Publikováno v:
IEEE Journal of Solid-State Circuits. 19:91-97
Internal gettering can be used to reduce crosstalk in imagers and latchup susceptibility in CMOS circuits. The internal gettering process forms defects in the bulk of the silicon wafers that are effective recombination sites for minority carriers in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d716138a4a3160b8a41d7bb4424304c
https://doi.org/10.1109/jssc.1984.1052091
https://doi.org/10.1109/jssc.1984.1052091
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