Zobrazeno 1 - 10
of 162
pro vyhledávání: '"Kwanpyo Kim"'
Autor:
Myeongjin Jang, Minseol Kim, Sol Lee, Minseok Kwon, Hani Kang, Kihyun Lee, Jinsub Park, Anh Tuan Hoang, Jong-Hyun Ahn, Yangjin Lee, Kwanpyo Kim
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract Mixed-dimensional van der Waals (vdW) heterostructures offer promising platforms for exploring interesting phenomena and functionalities. To exploit their full potential, precise epitaxial processes and well-defined heterointerfaces between
Externí odkaz:
https://doaj.org/article/492a9192be854d2b8ee5873db8498a18
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Abstract Understanding the nature of molecular excitons in low-dimensional molecular solids is of paramount importance in fundamental photophysics and various applications such as energy harvesting, switching electronics and display devices. Despite
Externí odkaz:
https://doaj.org/article/7ec668e8d70e459988d18ee3ba0dcd00
Autor:
Seyeong Cha, Giyeok Lee, Sol Lee, Sae Hee Ryu, Yeongsup Sohn, Gijeong An, Changmo Kang, Minsu Kim, Kwanpyo Kim, Aloysius Soon, Keun Su Kim
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023)
2D layered materials attract interest due to their potential for application in nanoelectronics and optoelectronics. Here authors report an order-disorder-type phase transition driven by temperature in bulk lead iodides, and interlayer sliding is ide
Externí odkaz:
https://doaj.org/article/2c58823992be4b01aedb2addb7181027
Autor:
Yeonsu Jeong, Han Joo Lee, Junkyu Park, Sol Lee, Hye-Jin Jin, Sam Park, Hyunmin Cho, Sungjae Hong, Taewook Kim, Kwanpyo Kim, Shinhyun Choi, Seongil Im
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-8 (2022)
Abstract We study a low voltage short pulse operating multilevel memory based on van der Waals heterostack (HS) n-MoSe2/n-MoS2 channel field-effect transistors (FETs). Our HS memory FET exploited the gate voltage (VGS)-induced trapping/de-trapping ph
Externí odkaz:
https://doaj.org/article/094c9be2251a4480ac740b684692cad4
Autor:
Hyuk Jin Kim, Nguyen Van Quang, Thi Huong Nguyen, Sera Kim, Yangjin Lee, In Hak Lee, Sunglae Cho, Maeng-Je Seong, Kwanpyo Kim, Young Jun Chang
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-8 (2022)
Abstract Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal conductivity. However, their thermoelectric parameters such as
Externí odkaz:
https://doaj.org/article/a7c1fd66a7184fa984f1ac12ba85b476
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-1 (2023)
Externí odkaz:
https://doaj.org/article/072678f029da4b679a7ff48a8b72c0ff
Autor:
Jong-Young Lee, Jong Hun Kim, Yeonjoon Jung, June Chul Shin, Yangjin Lee, Kwanpyo Kim, Namwon Kim, Arend M. van der Zande, Jangyup Son, Gwan-Hyoung Lee
Publikováno v:
Communications Materials, Vol 2, Iss 1, Pp 1-10 (2021)
Desulfurization of MoS2 alters its chemical and physical properties by breaking structural symmetry. Here, the atomic-scale mechanistic pathway by which this occurs is investigated during plasma etching, and changes in chemical structure and physical
Externí odkaz:
https://doaj.org/article/ed299cd15c9141ce92bfacd76719fb4d
Publikováno v:
Applied Microscopy, Vol 50, Iss 1, Pp 1-6 (2020)
Abstract Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped re
Externí odkaz:
https://doaj.org/article/3aab11e536b542bfa72cbecf80f5705e
Autor:
Sung Jin Yang, Kyu-Tae Park, Jaeho Im, Sungjae Hong, Yangjin Lee, Byung-Wook Min, Kwanpyo Kim, Seongil Im
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Two-dimensional materials show promise for 5G wireless communication applications. Here, the authors report vertical Schottky diodes based on thick mechanically exfoliated WSe2 flakes having low ohmic contact resistance of 50 Ω and ultrafast cutoff
Externí odkaz:
https://doaj.org/article/0d0112508a6a4ce3b474521618c000c1
Autor:
Anh Duc Nguyen, Tri Khoa Nguyen, Chinh Tam Le, Sungdo Kim, Farman Ullah, Yangjin Lee, Sol Lee, Kwanpyo Kim, Dooyong Lee, Sungkyun Park, Jong-Seong Bae, Joon I. Jang, Yong Soo Kim
Publikováno v:
ACS Omega, Vol 4, Iss 25, Pp 21509-21515 (2019)
Externí odkaz:
https://doaj.org/article/8ec8ca78724e4a2d8be5b856500e6fca