Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kwanhyeob Koh"'
Autor:
Yongsung Ji, Gitae Jeong, Joo-Chan Kim, Seungbae Lee, Daesop Lee, Yong-Kyu Lee, Hyun-Taek Jung, Ki-Chul Park, Hwang So-Hee, Artur Antonyan, Kwanhyeob Koh, J.W. Lee, Yoon-Jong Song, Hyeongsun Hong, Kilho Lee, Ung-hwan Pi, Ki-Hyun Hwang, Jung-Man Lim, Jong Shik Yoon, Hyunsung Jung, Daehyun Jang, Mark Pyo, Bo-Young Seo, SangHumn Lee, E. S. Jung, Byoung-Jae Bae, Hyunchul Shin, Oh Se-Chung
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
We demonstrate, for the first time, 28-nm embedded STT-MRAM operating at full industrial temperature range (−40~125°C) with >1E+6 endurance and >10 year retention for high speed MCU/IoT application. Robust cell operation is also demonstrated after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4b5a2ce996887b82fc42cbf625362c
https://doi.org/10.1109/vlsit.2018.8510623
https://doi.org/10.1109/vlsit.2018.8510623
Autor:
Gitae Jeong, Hoonki Kim, Kwanhyeob Koh, Jae-joon Oh, Ihun Song, Won-Cheol Jeong, H.S. Jeong, J.H. Park, Kinam Kim, S.Y. Lee
Publikováno v:
IEEE Transactions on Magnetics. 39:2851-2853
We have demonstrated fully integrated 64-kb magnetoresistive random access memory (MRAM) using 0.24-/spl mu/m CMOS technology and discussed some key issues in process integration. Optimal tunneling magnetoresistive (TMR) properties of MRAM bits (37%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72b198f9d5896f96132a428a0302e0ef
https://doi.org/10.1109/tmag.2003.816243
https://doi.org/10.1109/tmag.2003.816243
Autor:
Jinwoo Lee, Chang-hyun Cho, Kinam Kim, Kwanhyeob Koh, Hongsik Jeong, Gitae Jeong, Kyu-Hyun Lee, Jae-Goo Lee, Tae-Young Chung
Publikováno v:
31st European Solid-State Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e231c7014a8675678c686541229318a8
https://doi.org/10.1109/essderc.2001.195217
https://doi.org/10.1109/essderc.2001.195217
Autor:
Jaegoo Lee, Jinwoo Lee, Kwanhyeob Koh, Kyuhyun Lee, Changhyun Cho, Gitae Jeong, Hongsik Jeong, Taeyoung Chung, Kinam Kim
Publikováno v:
31st European Solid-State Device Research Conference; 2001, p127-130, 4p