Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kwangtaek Lee"'
Autor:
M. H. Kong, Hyung-Ji Kim, Richard Bucala, Hang Rae Kim, Yoon-Hoh Kook, So-Huei Kang, Bum Joon Kim, Kwangtaek Lee, Lin Leng, You-Seok Kim, Chung Gyu Park, Byongkyu Lee, Sunae Lee
Publikováno v:
Hormone and Metabolic Research. 43:642-645
Metabolic syndrome is a complex clinical disorder characterized by obesity, a disturbance of glucose metabolism, dyslipidemia, and hypertension, leading to increased cardiovascular risk. Macrophage migration inhibitory factor (MIF) is a proinflammato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d53a3d12aa4b4da16008708f42cb25dc
https://doi.org/10.1055/s-0031-1283150
https://doi.org/10.1055/s-0031-1283150
Autor:
Jong-Hyeob Baek, Kwangtaek Lee, Young-Moon Yu, Samseok Jang, Jaesang Lee, Dongjin Byun, Bum-Joon Kim, Seung-Jae Lee, Junggeun Jhin
Publikováno v:
Chemical Vapor Deposition. 16:80-84
An epitaxial, laterally-overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high-dose, N+ ion implantation. ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal-organic (MO) CVD. The GaN layer on the N+ ion-imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dc9aa34a3bee31795b28cfda04cff19
https://doi.org/10.1002/cvde.200906807
https://doi.org/10.1002/cvde.200906807
Autor:
Samseok Jang, Sang-Il Kim, Kwangtaek Lee, Bum-Joon Kim, Jaesang Lee, Dongjin Byun, Junggeun Jhin
Publikováno v:
ECS Transactions. 25:169-174
Epitaxial lateral overgrowth (ELO) process has limited use in GaN devices due to the uneasiness of regrowth or the likeliness of contamination from the ELO mask, even though it is a method to reduce the dislocation density in GaN grown on sapphire su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::544cf11485479c36bff3d5cd4d583977
https://doi.org/10.1149/1.3334805
https://doi.org/10.1149/1.3334805