Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kwangse, Ko"'
Autor:
Byeongchan So, Kyungbae Lee, Kyungjae Lee, Cheon Heo, Jaedo Pyeon, Kwangse Ko, Jongjin Jang, Okhyun Nam
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:4914-4918
This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd2c8980ab0a62e319c3b034578392e7
https://doi.org/10.1166/jnn.2016.12256
https://doi.org/10.1166/jnn.2016.12256
Publikováno v:
Journal of nanoscience and nanotechnology. 17(1)
We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eac21f5d17bf54f37931123515549b21
https://pubmed.ncbi.nlm.nih.gov/29630184
https://pubmed.ncbi.nlm.nih.gov/29630184
Autor:
Byeongchan, So, Kyungbae, Lee, Kyungjae, Lee, Cheon, Heo, Jaedo, Pyeon, Kwangse, Ko, Jongjin, Jang, Okhyun, Nam
Publikováno v:
Journal of nanoscience and nanotechnology. 16(5)
This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::df3e5bb304de643fbb35a28643d0c7ed
https://pubmed.ncbi.nlm.nih.gov/27483845
https://pubmed.ncbi.nlm.nih.gov/27483845
Autor:
Kwangse Ko, Sang-Woo Han, Okhyun Nam, Byeongchan So, Cheon Heo, Kyeongjae Lee, Kyungbae Lee, Taemyung Kwak, Ho-Young Cha
Publikováno v:
Japanese Journal of Applied Physics. 56:015502
The present study investigated the Mg doping effect in the gallium nitride (GaN) buffer layers (BLs) of AlGaN/GaN high-electron-mobility transistor (HEMT) structures grown on semi-insulating 4H-SiC substrates by metal organic chemical vapor depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f995734f8cc5243e4c7200709569d00c
https://doi.org/10.7567/jjap.56.015502
https://doi.org/10.7567/jjap.56.015502
Publikováno v:
Japanese Journal of Applied Physics. 54:051002
The self-compensation effect in Si-doped Al0.55Ga0.45N layers was investigated using different SiH4/III ratios. The degree of compressive strain changed with SiH4 flow rate during growth. With a low SiH4/III ratio of 2.46 × 10−6, compressive strai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5164c6bed5ed0319f7595aa1982417e6
https://doi.org/10.7567/jjap.54.051002
https://doi.org/10.7567/jjap.54.051002
Autor:
Kwangse Ko, Kyeongjae Lee, Byeongchan So, Cheon Heo, Kyungbae Lee, Taemyung Kwak, Sang-Woo Han, Ho-Young Cha, Okhyun Nam
Publikováno v:
Japanese Journal of Applied Physics; Jan2017, Vol. 56 Issue 1, p1-1, 1p
Publikováno v:
Japanese Journal of Applied Physics; May2015, Vol. 54 Issue 5, p1-1, 1p