Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Kwangeun Kim"'
Autor:
Seongwon Heo, Soohyun Choi, Sangwoo Lee, Yoonjin Cho, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang
Publikováno v:
Materials, Vol 17, Iss 21, p 5252 (2024)
In this study, Y2O3-based resistive random-access memory (RRAM) devices with a mono-ethanolamine (MEA) stabilizer fabricated using the sol–gel process on indium tin oxide/glass substrates were investigated. The effects of MEA content on the structu
Externí odkaz:
https://doaj.org/article/0ecf370c18e548ec9217006493f58272
Autor:
Sangwoo Lee, Yoonjin Cho, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang
Publikováno v:
Nanomaterials, Vol 14, Iss 9, p 791 (2024)
In this study, a Y2O3 insulator was fabricated via the sol–gel process and the effect of precursors and annealing processes on its electrical performance was studied. Yttrium(III) acetate hydrate, yttrium(III) nitrate tetrahydrate, yttrium isopropo
Externí odkaz:
https://doaj.org/article/79be02e66d62416583483c08bae04bae
Autor:
Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang
Publikováno v:
Nanomaterials, Vol 14, Iss 6, p 532 (2024)
Herein, sol–gel-processed Y2O3 resistive random-access memory (RRAM) devices were fabricated. The top electrodes (TEs), such as Ag or Cu, affect the electrical characteristics of the Y2O3 RRAM devices. The oxidation process, mobile ion migration sp
Externí odkaz:
https://doaj.org/article/0360bf6111364eaeae535f26a9bc07ca
Autor:
Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Minsu Park, Kwangeun Kim, Jaewon Jang
Publikováno v:
ACS Omega, Vol 7, Iss 12, Pp 10262-10267 (2022)
Externí odkaz:
https://doaj.org/article/a20f6596003b4834b7fc4b45525c0c12
Autor:
Taehun Lee, Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Sin-Hyung Lee, Jaewon Jang
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2432 (2023)
Yttrium oxide (Y2O3) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage fo
Externí odkaz:
https://doaj.org/article/3c559ee45d1d4c4ca6f71fa563c4c53d
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2462 (2023)
Herein, sol–gel-processed Y2O3–Al2O3 mixed oxide-based resistive random-access-memory (RRAM) devices with different proportions of the involved Y2O3 and Al2O3 precursors were fabricated on indium tin oxide/glass substrates. The corresponding stru
Externí odkaz:
https://doaj.org/article/ccf002f8ffa54d4f82194ead48a6b818
Autor:
Bongho Jang, Hongki Kang, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Hyuk-Jun Kwon, Jaewon Jang
Publikováno v:
IEEE Access, Vol 8, Pp 123013-123018 (2020)
The effect of ultraviolet/Ozone (UV/O3)-assisted annealing process on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films is investigated in this study. Via the UV/O3-assisted annealing processes, mixed-phase SnO2 film
Externí odkaz:
https://doaj.org/article/9c055fbe0e844dc28c93c0519c5a6448
Autor:
Kwangeun Kim, Jaewon Jang
Publikováno v:
Inorganics, Vol 10, Iss 12, p 228 (2022)
Here, heterostructures composed of p+Si nanomembranes (NM)/n+GaAs were fabricated by ultraviolet/ozone (UV/O3, UVO) treatment, and their tunneling properties were investigated. The hydrogen (H)-terminated Si NM was bonded to the oxygen (O)-terminated
Externí odkaz:
https://doaj.org/article/93d5d18926f14076b5c0ef3f4061ac11
Autor:
Hae-In Kim, Taehun Lee, Won-Yong Lee, Kyoungdu Kim, Jin-Hyuk Bae, In-Man Kang, Sin-Hyung Lee, Kwangeun Kim, Jaewon Jang
Publikováno v:
Materials, Vol 15, Iss 19, p 6859 (2022)
In this study, we fabricated sol-gel-processed Y2O3-based resistive random-access memory (RRAM) devices. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. The long-ter
Externí odkaz:
https://doaj.org/article/4b0969c8d6964c6cb65dff35e300ddc3
Publikováno v:
Results in Physics, Vol 25, Iss , Pp 104279- (2021)
Negative differential resistance (NDR) region was established in Si/GaAs tunnel junction (TJ) formed by single crystalline nanomembrane (NM) transfer method. P + Si NM was transfer-printed onto n + GaAs epi-wafer, leading to the formation of Si/GaAs
Externí odkaz:
https://doaj.org/article/cca5c5dd71cf4e25829c69bfd2f14107