Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Kwang-jin Moon"'
Autor:
Lee Hakseung, Yi-koan Hong, Hyokyung Cho, SeonKwan Hwang, Tae-Seong Kim, Hoon-joo Na, Kyu-Ha Lee, Ki-Hyun Hwang, Sohye Cho, Kwang-jin Moon
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
3D Multi-stacking technology using Cu-Cu hybrid wafer bonding has been developed to achieve superior power, speed performances and higher density with minimized form factor. To realize multi-stacked device by using Wafer on wafer (WoW) bonding, both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06af239fac598003ea86a1022c8b0e0d
https://doi.org/10.1109/ectc32696.2021.00076
https://doi.org/10.1109/ectc32696.2021.00076
Autor:
Tae-Young Kim, Kwang-jin Moon, Seok-Ho Kim, Seong-min Son, Geun Young Yeom, Ki-Hyun Hwang, Kim Hoechul, Jin-Nam Kim, Hyung-Jun Jeon, Junhong Min, Hoon-joo Na, Eunsuk Jung
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
The low-temperature wafer bonding has been studied on two types of dielectric material (SiO, SiCN) as final bonding layers. It is important for the wafer bonding technology to obtain the higher interfacial energy between two bonding wafers, and oxyge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15beb870117ad6ad4e606b3c87a692ec
https://doi.org/10.1109/ectc32862.2020.00315
https://doi.org/10.1109/ectc32862.2020.00315
Autor:
Hoon-joo Na, Seok-Ho Kim, Kwang-jin Moon, Kim Taeyeong, Ki-Hyun Hwang, Pil-Kyu Kang, Kyu-Ha Lee, Joo-Hee Jang, Sang-Jin Hyun
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
The scaling of semiconductor device below 10nm has faced the higher process difficulty and longer development periods. Three-dimensional integrated circuits (3D IC) using chip partitioning and wafer-to-wafer bonding have been acknowledged as the next
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a1095b4b27bd9016e98ac66d6863115
https://doi.org/10.1109/ectc.2019.00101
https://doi.org/10.1109/ectc.2019.00101
Autor:
Kwang-jin Moon
Publikováno v:
Journal of CheongRam Korean Language Education. :251-283
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1938c1f4ae0a4e84e423da05fcb4d1
https://doi.org/10.26589/jockle..43.201106.251
https://doi.org/10.26589/jockle..43.201106.251
Autor:
Yeong-lyeol Park, Ki-Young Yun, Jiwoong Sue, Kwang-jin Moon, Chilhee Chung, So-Young Lee, Jin-ho An, Gil-heyun Choi, Byung-lyul Park, Ho-Jun Lee, Ho-Kyu Kang, Do-Sun Lee
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
Stresses induced by the large volume of Cu in Through Silicon Vias (TSV) can result in global/local Cu extrusion which may affect reliability in 3D chip stacking technologies beyond the 28 nm node for high performance mobile devices. In this work, TS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21b198e77574825ebd19eef96489ce54
https://doi.org/10.1109/iitc.2012.6251586
https://doi.org/10.1109/iitc.2012.6251586
Autor:
null DeokYoung Jung, null Kwang-Jin Moon, null Byung-Lyul Park, null Gilheyun Choi, null Ho-Kyu Kang, null Chilhee Chung, null Deok Young Jung, null Yonghan Rho
Publikováno v:
2012 SEMI Advanced Semiconductor Manufacturing Conference.
As semiconductor performance improvements through device scale-down becomes more difficult, 3D chip stacking technology with TSVs (Through Silicon Via) is becoming an increasingly attractive solution to achieve higher system performances by way of hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6dac8005e60054c27102f0e5b3e24b9
https://doi.org/10.1109/asmc.2012.6212888
https://doi.org/10.1109/asmc.2012.6212888
Autor:
June Moon, Kwang-jin Moon, Sang-Bom Kang, Hyung-Gon Kim, Woong-Hee Sohn, N.J. Bae, Suk-pil Kim, G.H. Choi, U. I. Chung
Publikováno v:
IEEE International Electron Devices Meeting 2003.
A novel CVD-cobalt process which enables a uniform salicidation even in novel MOS device structures with complex shape is developed for the first time. With CVD-cobalt salicidation, identical values of low sheet resistance can be realized on actives
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2196bce52ad366ecfbee75c3aa36e77a
https://doi.org/10.1109/iedm.2003.1269331
https://doi.org/10.1109/iedm.2003.1269331
Autor:
Joo-Tae Moon, Jong-Ho Yun, Hyun-Su Kim, Gil-heyun Choi, U-In Chung, Sung-tae Kim, Woong-Hee Sohn, Sug-Woo Jung, Kwang-jin Moon, Seong-hwee Cheong, Se-Hoon Kim, Nam-Jin Bae
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa1697e59ec8e4283367509c7364a7bb
https://doi.org/10.7567/ssdm.2004.p3-7
https://doi.org/10.7567/ssdm.2004.p3-7
Publikováno v:
Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
The electrical characteristics of PECVD-WN/sub x/ and CVD-TiN films as the upper electrode for Ta/sub 2/O/sub 5/ capacitors were compared in a 3D stack structure. In terms of step coverage, CVD-TiN shows excellent results of about 90% at the stack st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3083a975d69ad84bfef5e4a73a47eb87
https://doi.org/10.1109/iitc.1998.704761
https://doi.org/10.1109/iitc.1998.704761
Autor:
Gil Heyun Choi, Myoung Bum Lee, Sang Bom Kang, Kwang Jin Moon, Young Wook Park, Hee Sook Park, Joo Tae Moon
Publikováno v:
2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517).
The implementation of W bit-line enabled the integration of n+ and p+ common contact process at bit-line level. Despite the advantages of the common contact process such as chip-area reduction and elimination of the burden associated with MC dry etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdecef7200b067d41f1afb6167777d45
https://doi.org/10.1109/vtsa.2001.934491
https://doi.org/10.1109/vtsa.2001.934491