Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kwang-ho Kwonl"'
Publikováno v:
Journal of Nanoscience and Nanotechnology. 14:9534-9540
Etching characteristics and mechanisms of low-temperature SiN(x) thin films for nano-devices in CH2F2/O2/Ar inductively-coupled plasmas were studied. The etching rates of SiN(x) thin films as well as the etching selectivities over Si and photoresist
Publikováno v:
Journal of nanoscience and nanotechnology. 14(12)
Etching characteristics and mechanisms of low-temperature SiN(x) thin films for nano-devices in CH2F2/O2/Ar inductively-coupled plasmas were studied. The etching rates of SiN(x) thin films as well as the etching selectivities over Si and photoresist