Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kwang-Myung Rho"'
Autor:
Jeong-Kug Lee, Hyung-Suk Kim, Jongwook Lee, Ji-Woon Yang, Myung-Jun Chung, Won-Chul Lee, Min-Rok Oh, Jeong-Yun Yang, Kyoung-Wook Park, Won-Chang Lee, Kwang-Ho Ahn, Jae-Beom Park, Hyung-Ki Kim, Dai-Hoon Lee, Kyung-Suk Choi, Yo-Hwan Koh, Kwang-Myung Rho, In-Seok Hwang, Yeon-Cheol Heo, Chan-Kwang Park, Min Huh, Byung-Cheol Lee
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
1 Gbit SOI DRAM with a body-contacted (BC) SOI MOSFET structure is successfully realized for the first time. The fabricated 1G SOI DRAM has fully compatible process with 0.17 /spl mu/m bulk CMOS technology except for the isolation process. The key ad
Autor:
Yo-Hwan Koh, Min-Rok Oh, Jong-Wook Lee, Ji-Woon Yang, Won-Chang Lee, Chan-Kwang Park, Jae-Beom Park, Yeon-Cheol Heo, Kwang-Myung Rho, Byung-Cheol Lee, Myung-Jun Chung, Min Huh, Hyung-Suk Kim, Kyung-Suk Choi, Won-Chul Lee, Jeong-Kug Lee, Kwang-Ho Ahn, Kyoung-Wook Park, Jeong-Yun Yang, Hyung-Ki Kim
Publikováno v:
International Electron Devices Meeting IEDM Technical Digest; 1997, p579-582, 4p
Autor:
Tae-Su Jang, Joong-Sik Kim, Sang-Min Hwang, Young-Hoon Oh, Kwang-Myung Rho, Seoung-Ju Chung, Su-Ock Chung, Jae-Geun Oh, Bhardwaj, S., Jungtae Kwon, Kim, D., Nagoga, M., Yong-Taik Kim, Seon-Yong Cha, Seung-Chan Moon, Sung-Woong Chung, Sung-Joo Hong, Sung-Wook Park
Publikováno v:
2009 Symposium on VLSI Technology; 2009, p234-235, 2p
Conference
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