Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Kwang Yoo Byun"'
Autor:
Tian Tian, Hwa-Young Son, Rao Morusupalli, Kwang-Yoo Byun, R. Caramto, Young-Chang Joo, Nobumichi Tamura, Hwisu Shin, Martin Kunz, Arief Suriadi Budiman, Larry Smith, Y-L. Shen
Publikováno v:
Procedia Engineering. 139:101-111
One of the key enablers for the successful integration of 3-D interconnects using the Through-Silicon Via (TSV) schemes is the control of the mechanical stresses in the Cu TSV itself as well as in the surrounding silicon substrate. The synchrotron-so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e70e0c75bdcf5d6660e7d512d09da659
Autor:
Hae-A. Seul Shin, Sung-Hwan Hwang, Kwang-Yoo Byun, B.-J. Kim, Nobumichi Tamura, Qwan-Ho Chung, Min Suk Suh, Ho-Young Son, Young-Chang Joo, Arief Suriadi Budiman, Martin Kunz
Publikováno v:
Microelectronics Reliability. 52:530-533
Through-silicon via (TSV) has been used for 3-dimentional integrated circuits. Mechanical stresses in Cu and Si around the TSV were measured using synchrotron X-ray microdiffraction. The hydrostatic stress in Cu TSV went from high tensile of 234 MPa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c9b42ce83caa41d76f9aa56385224a
https://doi.org/10.1016/j.microrel.2011.10.016
https://doi.org/10.1016/j.microrel.2011.10.016
Autor:
Dong-Ik Kim, Ho-Young Son, Ju-Heon Kim, Arief Suriadi Budiman, Hae-A. Seul Shin, Nobumichi Tamura, Martin Kunz, Byoung-Joon Kim, Young-Chang Joo, Sung-Hwan Hwang, Kwang-Yoo Byun
Publikováno v:
Journal of Electronic Materials. 41:712-719
The microstructural evolution of Cu through-silicon vias (TSVs) during thermal annealing was investigated by analyzing the Cu microstructure and the effects of twin boundaries and stress in the TSV. The Cu TSV had two regions with different grain siz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::742fa87c1721ef173d71d2ad9c6b67cd
https://doi.org/10.1007/s11664-012-1943-7
https://doi.org/10.1007/s11664-012-1943-7
Autor:
Sang-Joon Lim, Heung-Jae Shin, Jong-Tae Lee, Woong-Sun Lee, Qwan-Ho Chung, Jung-Kwon Park, Kwang-Yoo Byun
Publikováno v:
International Symposium on Microelectronics. 2011:000887-000890
Recently, mobile age is blooming and makes change of 21st century. Especially multi chip package – MCP- is located center position of this flash era. Moreover, radio frequency –RF- sensitivity determines the product quality and life, therefore we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e8aa304b5d7473886d5c8ac0d4ed0c5
https://doi.org/10.4071/isom-2011-tha1-paper2
https://doi.org/10.4071/isom-2011-tha1-paper2
Autor:
Qwan-Ho Chung, Kwang-Yoo Byun, Young-Bae Park, Seung-Taek Yang, Gi-Tae Lim, Jang-Hee Lee, Min Suk Suh
Publikováno v:
Journal of the Korean Physical Society. 54:1784-1792
The e ects of severe current crowding and Joule heating on the damage morphology and the electromigration parameters were evaluated for ip chip Sn-3.5Ag solder bumps with Cu underbump metallurgy. in-situ electromigration testing in a scanning electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2085b96f60e8bad24abd60ce970452dd
https://doi.org/10.3938/jkps.54.1784
https://doi.org/10.3938/jkps.54.1784
Publikováno v:
IEEE Transactions on Electronics Packaging Manufacturing. 28:168-175
To evaluate various Pb-free solder systems for leaded package, thin small outline packages (TSOPs) and chip scale packages (CSPs) including leadframe CSP (LFCSP), fine pitch BGA (FBGA), and wafer level CSP (WLCSP) were characterized in terms of board
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dfbee919d9e526017baa46fddec0409
https://doi.org/10.1109/tepm.2005.847398
https://doi.org/10.1109/tepm.2005.847398
Autor:
N.-S Kim, M. Murugesan, Kang-Wook Lee, Jichoel Bea, Takafumi Fukushima, Min Suk Suh, Mitsumasa Koyanagi, Hwa-Young Son, Kwang-Yoo Byun
Publikováno v:
3DIC
Multi-layer 3D chip stacking by a surface-tension-driven self-assembly technique is demonstrated. After multi-layer self-assembly, memory chips having Cu-SnAg μbump and Cu-TSVs are bonded on a substrate by thermal compression to confirm electrical j
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd2f0fe9231f8b7b379b3991e356e5fd
https://doi.org/10.1109/3dic.2013.6702360
https://doi.org/10.1109/3dic.2013.6702360
Autor:
Pierre Chia, Jae-Sung Oh, Nam-Seog Kim, Jay Im, Rui Huang, Chenglin Wu, Kwang-Yoo Byun, Paul S. Ho, Tengfei Jiang, Li Li, Peng Su, Xi Liu, Ho-Young Son
Publikováno v:
2013 IEEE 63rd Electronic Components and Technology Conference.
The characteristics of thermal stresses in a five-stacked memory dies containing through-silicon vias (TSVs) were measured with synchrotron x-ray microdiffraction. The measurements were performed in and around the Cu vias for both the top and bottom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516f74c85b541e17a12e6a11d21766d2
https://doi.org/10.1109/ectc.2013.6575641
https://doi.org/10.1109/ectc.2013.6575641
Autor:
Paul S. Ho, Rui Huang, Tengfei Jiang, Qiu Zhao, Kwang-Yoo Byun, Suk-Kyu Ryu, Ho-Young Son, Jay Im
Publikováno v:
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.
Thermal stresses in TSV structures have been measured using micro-Raman spectroscopy and precision wafer curvature technique as a function of temperature and during thermal cycling. The results were verified by finite element analysis (FEA) to charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::163738049116968ab728ce8a92313008
https://doi.org/10.1109/icsict.2012.6467715
https://doi.org/10.1109/icsict.2012.6467715
Autor:
Jay Im, Ho-Young Son, Rui Huang, Qiu Zhao, Paul S. Ho, Tengfei Jiang, Suk-Kyu Ryu, Kwang-Yoo Byun
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
Thermal stresses in TSV structures have been measured using micro-Raman spectroscopy and precision wafer curvature technique as a function of temperature and during thermal cycling. The results were verified by finite element analysis (FEA) to charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63b2a3c87815a2451bd374e683045c6e
https://doi.org/10.1109/vlsit.2012.6242482
https://doi.org/10.1109/vlsit.2012.6242482