Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Kwang Sing Yew"'
Autor:
Ee Jan Khor, Jian Xun Sun, Zin Tun Thant, Ramasamy Chockalingam, Wei-Hui Hsu, Pannirselvam Somasuntharam, Kwang Sing Yew, Hin Kiong Yap, Juan Boon Tan
Publikováno v:
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d197aa0abb4332a268ae54d61fb5d2a
https://doi.org/10.1109/asmc54647.2022.9792534
https://doi.org/10.1109/asmc54647.2022.9792534
Autor:
Kwang Sing Yew, Ran Xing Ong, Hin Kiong Yap, Wanbing Yi, Jacquelyn Phang, R. Chockalingam, Juan Boon Tan
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9037ef08e283d31b54661fdadfc8aed
https://doi.org/10.1109/irps48227.2022.9764428
https://doi.org/10.1109/irps48227.2022.9764428
Autor:
Yi Wanbing, Kwang Sing Yew, Ramasamy Chockalingam, Ran Xing Ong, Juan Boon Tan, Bo Li, Yi Jiang
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
Limiting the minimum spacing design rule of intra-metal lines and skipping the inter-metal layer in interconnects for more oxide spacing in order to improve TDDB margin for HV applications is not viable as it severely compromises the competitiveness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db186c38c3456ee7e80ae5dbc81c879
https://doi.org/10.1109/iitc51362.2021.9537519
https://doi.org/10.1109/iitc51362.2021.9537519
Autor:
Juan Boon Tan, Kwang Sing Yew, Ramasamy Chockalingam, Yi Wanbing, Kemao Lin, Yi Jiang, Jonathan Yoong Seang Ong, Weining Cheng, Hsieh Curtis Chun-I, Soh Yun Siah
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Two phenomena of dual damascene via open in extremely low local metal pattern density region, and when connected through a narrow width metal line to a big pad opening with high density sea of vias are identified. A systematic study was carried out t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::483d174004d5757cf596a849c53ebba4
https://doi.org/10.1109/iitc47697.2020.9515630
https://doi.org/10.1109/iitc47697.2020.9515630
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Control of variation in interconnects resistance and capacitance (RC) model due to variability in semiconductor manufacturing is extremely challenging, especially to meet the stringent automotive sigma requirements of Cp/Cpk 1.67. Real-time in-line A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9e1b535713f9934fdbec41bd93e9da0
https://doi.org/10.1109/iitc47697.2020.9515678
https://doi.org/10.1109/iitc47697.2020.9515678
Publikováno v:
ACS applied materialsinterfaces. 12(1)
The ultimate aim of artificial synaptic devices is to mimic the features of biological synapses as closely as possible, in particular, its ability of self-adjusting the synaptic weight responding to the external stimulus. In this work, memristors, ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1d39dff1af4e271fe5209f2d8357c02
https://pubmed.ncbi.nlm.nih.gov/31815426
https://pubmed.ncbi.nlm.nih.gov/31815426
Publikováno v:
ECS Transactions. 86:55-64
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb8a3090b9eeb9743604a376b83ab3e8
https://doi.org/10.1149/08603.0055ecst
https://doi.org/10.1149/08603.0055ecst
Autor:
Kwang Sing Yew, Ramasamy Chockalingam, Choon Gay Lee, Jasper Goh, Baozhuo Chen, Xiaochong Guan, Rex Hsu, Juan Boon Tan
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
The control of interconnects resistance, intra- and inter-capacitance (RC) variations in order to meet the stringent automotive sigma requirements is an extremely challenging task in the advanced semiconductor manufacturing due to many process variab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::182f5940720534e370d63127fe405b96
https://doi.org/10.1109/edtm.2019.8731023
https://doi.org/10.1109/edtm.2019.8731023
We show that resistive switching in the SiO2/Cu stack can be modified by a brief exposure of the oxide to an Ar plasma. The set voltage of the SiO2/Cu stack is reduced by 33%, while the breakdown voltage of the SiO2/Si stack (control) is almost uncha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e2cb6033d422a9df1fc8896ea208d6c
https://hdl.handle.net/10356/89762
https://hdl.handle.net/10356/89762
Publikováno v:
ECS Transactions. 69:169-181
Ultra-thin SiO2 and high-k dielectrics have been shown to exhibit electrical-stress-induced soft breakdown (SBD).1 Typically, SBD is an irreversible process, as observed from electrical measurement, and would evolve towards the catastrophic hard brea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0efc4cc4a2f789b32322dff9aec0215
https://doi.org/10.1149/06905.0169ecst
https://doi.org/10.1149/06905.0169ecst