Výsledky vyhledávání - "Kwang Hwan Ji"

P-2: Novel High Mobility Oxide TFT with Self-Aligned S/D Regions Formed by Wet-etch process

Autor: Pil Sang Yun, Kwon-Shik Park, Jong Uk Bae, Kwang Hwan Ji, Noh Jiyong, In-Byeong Kang

Publikováno v: SID Symposium Digest of Technical Papers. 47:1129-1131

In this paper, we investigated the high mobility InGaSnO TFTs with self-aligned source/drain regions (n+−IGTO) formed by wet etch process. We compared the electrical characteristics of n+−IGTO formed by dry-etch and wet-etch. The resistivity and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::48585ade5c6f1a33ed0b54a158c00520
https://doi.org/10.1002/sdtp.10820

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Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress

Autor: Kwang Hwan Ji, Rino Choi, Se Yeob Park, Yeon-Gon Mo, Ji-In Kim, Hong Yoon Jung, Jae Kyeong Jeong

Publikováno v: Microelectronic Engineering. 88:1412-1416

In this paper an examination is presented of the effect of the gate dielectric materials and bilayer stack on the negative bias illumination stress (NBIS) instability of InGaZnO (IGZO) TFTs. The threshold voltage (V"t"h) movement by NBIS was greatly

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::22480ee7671f88c300b0f622f2398616
https://doi.org/10.1016/j.mee.2011.03.069

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P-33: Impact of TiO2 Incorporation in the Structural and Electrical Property of the Sputtered Indium Tin Oxide Field Effect Transistors

Autor: Hoichang Yang, Jae Kyeong Jeong, Kwang Hwan Ji, Ji-In Kim

Publikováno v: SID Symposium Digest of Technical Papers. 42:1212-1214

We demonstrate that controlled cation composition in ITO-based films combined with solid-solution doping by titanium as well as the suppression of crystallization. The field-effect transistor having 3.7at% Ti-doped ITO film exhibited the high mobilit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68b46680f7d861bca25fee27a3ab7cb1
https://doi.org/10.1889/1.3621048

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Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

Autor: Sang-Hee Ko Park, Yeon-Gon Mo, Sang Yoon Lee, Kwang Hwan Ji, Myung-kwan Ryu, Jae Kyeong Jeong, Jong Han Jeong, Chi-Sun Hwang, Shinhyuk Yang, Ji-In Kim

Publikováno v: IEEE Electron Device Letters. 31:1404-1406

This letter examines the effect of the gate dielectric material on the light-induced bias-temperature instability of an In-Ga-Zn-O (IGZO) thin-film transistor (TFT). After applying positive and negative bias stresses, the SiNx-gated TFT exhibited inf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1561934c5d0f421836919aaa312277ae
https://doi.org/10.1109/led.2010.2073439

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The effect of SiO2/SiNx bilayer structure on the bias and light-induced instability in InGaZnO TFTs

Autor: Kwang Hwan Ji, Jae Kyeong Jeong, Hong Yoon Jung, Se Yeob Park, Yeon-Gon Mo, Ji-In Kim

Publikováno v: 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

We investigated the effect of gate dielectric structure on the light-induced bias-temperature instability of IGZO TFT. After the application of light-induced negative bias stress, the SiO 2 /SiN x bilayer gate dielectric TFT exhibited the superior st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f07f16e548d0f46bec900b48bfaeb56
https://doi.org/10.1109/ipfa.2011.5992716

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Ti-doped indium tin oxide thin films for transparent field-effect transistors: control of charge-carrier density and crystalline structure

Autor: Ji In Kim, Jae Kyeong Jeong, Hoichang Yang, Mi Jang, Kwang Hwan Ji, Rino Choi

Publikováno v: ACS applied materialsinterfaces. 3(7)

Indium tin oxide (ITO) films are representative transparent conducting oxide media for organic light-emitting diodes, liquid crystal displays, and solar cell applications. Extending the utility of ITO films from passive electrodes to active channel l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9517160a85d2992ab12efdc52b247001
https://pubmed.ncbi.nlm.nih.gov/21663320

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Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies

Autor: Kwang Hwan Ji, Sangyoon Lee, Seok-Jun Seo, Tae Sang Kim, Myung Kwan Ryu, Sun Jae Kim, Jong Baek Seon, Kyoung-seok Son, Joon Seok Park, Jae Kyeong Jeong, Hyun-Suk Kim

Publikováno v: Applied Physics Letters. 102:122108

The optical absorption in the sub-gap region of amorphous indium zinc oxide films and the photo-induced negative bias stability of the resulting thin film transistors were studied. As the indium ratio increases, optical absorption via sub-gap states

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::58e0de1bfc05da38dbd67dce581854ff
https://doi.org/10.1063/1.4794419

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Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

Autor: Hong Yoon Jung, Kwang Hwan Ji, Kyoung Seok Son, Rino Choi, Myung Kwan Ryu, Ji In Kim, Sang Yoon Lee, Se Yeob Park, Jae Kyeong Jeong

Publikováno v: Applied Physics Letters. 100:162108

This study examined the effect of oxygen (O2) high pressure annealing (HPA) on tin-doped indium oxide (ITO) thin film transistors (TFTs). The HPA-treated TFT at 150 °C exhibited a high saturation mobility (μSAT), low subthreshold gate swing (SS), t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::59ae29997062f51ec289c12e1ceff663
https://doi.org/10.1063/1.4704926

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