Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Kwang Heum Lee"'
Autor:
Do Hyung Kim, Kwang-Heum Lee, Seung Hee Lee, Junsung Kim, Junghoon Yang, Jingyu Kim, Seong-In Cho, Kwang Hwan Ji, Chi-Sun Hwang, Sang-Hee Ko Park
Publikováno v:
IEEE Electron Device Letters. 43:1677-1680
Autor:
Eun Ha Kim, Kwang Heum Lee
Publikováno v:
Crisis and Emergency Management: Theory and Praxis. 16:101-116
This study identified nurses’ attitudes toward brain death organ transplantation and the degree of knowledge about hospice palliative care and confirmed the relationship between these variables. The data were collected from 238 nurses with a minimu
Autor:
Ji Hun Choi, Yong-Hae Kim, Gi Heon Kim, Joo Yeon Kim, Chi-Sun Hwang, Jinwoong Kim, Chi-Young Hwang, Sang-Hee Ko Park, Kwang-Heum Lee, Hee-Ok Kim, Jong-Heon Yang, Jae-Eun Pi, Won-Jae Lee
Publikováno v:
Advances in Display Technologies X.
Holographic display is known as the most realistic 3D display by creating real 3D image in front of observer. But there are tremendous technical hurdles in realizing electronic hologram. It is required to achieve very small pixel pitch SLM (spatial l
Publikováno v:
Microelectronic Engineering. 253:111676
Autor:
Hye-In Yeom, Jong-Beom Ko, Kwang-Heum Lee, Seung-Hee Lee, Chi-Sun Hwang, Sang-Hee Ko Park, Yunyong Nam
Publikováno v:
SID Symposium Digest of Technical Papers. 48:389-392
We investigated the effect of back channel material which plays as a channel defining layer in vertical TFT for the application to the TFT of ultra-high resolution display. Although the IGZO vertical TFT with polyimide back channel has low mobility,
Autor:
Byeong-Soo Bae, Chan Beum Park, Young-Woo Lim, Sang-Hee Ko Park, Jinhyeong Jang, Kwang-Heum Lee, Junho Jang, Injun Lee, Yong Ho Kim, Wonryung Lee
Publikováno v:
Advanced Electronic Materials. 6:2070016
Autor:
Byeong-Soo Bae, Injun Lee, Chan Beum Park, Jinhyeong Jang, Young-Woo Lim, Wonryung Lee, Sang-Hee Ko Park, Kwang-Heum Lee, Yong Ho Kim, Junho Jang
Publikováno v:
Advanced Electronic Materials. 6:1901065
Publikováno v:
Proceedings of the International Display Workshops. :570
Publikováno v:
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm2/Vs, threshold volt
Publikováno v:
physica status solidi (a). 214:1700183
Gate insulator (GI) materials in top gate structured InGaZnO thin-film transistor (TFT) with copper gate electrode are examined for the application to the large area display. To overcome the problems with hydrogen diffusion, which can influence the n