Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Kwan-Yong Lim"'
Autor:
David Burnett, C. Jerome, K. J. Lee, J. G. Lee, W. Hong, Kwan-Yong Lim, D. K. Sohn, S. Y. Mun, H. C. Lo, Y. J. Shi, O. Hu, J. Versaggi, Sanjay Parihar, S. B. Samavedam
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
14nm node SRAM using FinFETs with advanced Replacement Metal Gate (RMG) module shows sensitive Access Distuib Margin (ADM) response to Local Layout Effect (LLE) as seen in planar CMOS technology using RMG [1]. Additionally, 14nm FinFET technology has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cf78fa848924932e94b237d264b25a8
https://doi.org/10.1109/s3s.2017.8309248
https://doi.org/10.1109/s3s.2017.8309248
Autor:
Thamarai S. Devarajan, Praneet Adusumilli, Derrick Liu, Hoon Kim, Vijay Narayanan, Christopher Prindle, Jeffrey C. Shearer, Terence B. Hook, Jie Yang, Miaomiao Wang, Mark Raymond, Andreas Knorr, Steven Bentley, Bruce Miao, Shogo Mochizuki, Oleg Gluschenkov, Kwan-Yong Lim, Philip J. Oldiges, Chengyu Niu, Bei Liu, Dinesh Gupta, Koji Watanabe, Gen Tsutsui, Mukesh Khare, Rama Divakaruni, Rohit Galatage, Huimei Zhou, Pietro Montanini, Gauri Karve, Jay W. Strane, Jody A. Fronheiser, Rajasekhar Venigalla, Chun Wing Yeung, Hiroaki Niimi, Dechao Guo, Fee Li Lie, Kisup Chung, Reinaldo A. Vega, James J. Kelly, Ruqiang Bao, Eric R. Miller, Huiming Bu, Zuoguang Liu, Robert R. Robison, Shariq Siddiqui, Sivananda K. Kanakasabapathy, Hemanth Jagannathan, Andrew M. Greene
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Low Ge content SiGe-based CMOS FinFET is one of the promising technologies [1-2] offering solutions for both high performance and low power applications. In this paper, we established a competitive SiGe-based CMOS FinFET baseline and examined various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a314387759ff753d305942894281270a
https://doi.org/10.1109/iedm.2016.7838439
https://doi.org/10.1109/iedm.2016.7838439
Autor:
Jun-Mo Yang, C., Ju-Chul Park, Dae-Gyu Park, Kwan-Yong Lim, C., Soun-Young Lee, C., Sung-Wook Park, Youn-Joong Kim, C.
Publikováno v:
Journal of Applied Physics; 9/15/2003, Vol. 94 Issue 6, p4198, 5p, 6 Black and White Photographs, 2 Diagrams, 1 Graph
Autor:
Kwan-Yong Lim, Gyu-Seog Cho, Sung-Joo Hong, Hi-Duck Lee, Hong-Sun Yang, Sung-Kye Park, Ga-Won Lee, Yong Soo Kim
Publikováno v:
IEEE Electron Device Letters. 30:181-184
In this letter, W/WNx/poly-Si gate DRAM transistors with oxide spacers grown by low-temperature atomic layer deposition (ALD) have been fabricated, and the electrical characteristics are analyzed. The low-temperature ALD oxide effectively prevents th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b25666b1ce2aaaa555b3a6e9b7a35ce4
https://doi.org/10.1109/led.2008.2010141
https://doi.org/10.1109/led.2008.2010141
Autor:
Yong Soo Kim, Kwan-Yong Lim, Se Aug Jang, Min Gyu Sung, Hong-Seon Yang, Jinwoong Kim, Heung-Jae Cho, Yun Taek Hwang, Ja Chun Ku
Publikováno v:
Japanese Journal of Applied Physics. 47:2704-2709
We investigated the effect of boron at the interface of the diffusion barrier in tungsten polymetal gate stacks on the gate contact interfacial resistance between tungsten and p+ polycrystalline silicon (poly-Si). B–N formation can occur at the bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af8ec36ceda04e9502a3de97d2a4bd36
https://doi.org/10.1143/jjap.47.2704
https://doi.org/10.1143/jjap.47.2704
Autor:
Seung Ryong Lee, Se-Aug Jang, Ja-Chun Ku, Hong-Seon Yang, Min Gyu Sung, Heung-Jae Cho, Kwan-Yong Lim, Tae-Yoon Kim, Yong Soo Kim, Jinwoong Kim
Publikováno v:
Japanese Journal of Applied Physics. 46:7256-7262
Gate oxide reliability characteristics using different diffusion barrier metals for a tungsten polycrystalline silicon (poly-Si) gate stack were investigated in detail. The insertion of a thin WSix layer in a tungsten poly gate stack could effectivel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::438dfeecc34d3d2dd16eade71002f048
https://doi.org/10.1143/jjap.46.7256
https://doi.org/10.1143/jjap.46.7256
Autor:
Min Gyu Sung, Se-Aug Jang, Seung-Ho Pyi, Yong Soo Kim, Moon Sig Joo, Heung-Jae Cho, Jinwoong Kim, Tae-Yoon Kim, Ju-Hee Lee, Seung Ryong Lee, Kwan-Yong Lim, Hong-Seon Yang
Publikováno v:
Japanese Journal of Applied Physics. 46:2134-2138
Tungsten dual polygate (W-DPG) stacks with diffusion barriers formed by the Ti(N) process were investigated in terms of gate contact resistance (Rc) and the polydepletion effect. The Ti layer in the Ti/WN diffusion barrier is found to be converted in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::291d23daec6891c20510a7c09d4152cc
https://doi.org/10.1143/jjap.46.2134
https://doi.org/10.1143/jjap.46.2134
Autor:
Youn-Joong Kim, Dae-Gyu Park, Soun-Young Lee, Jun-Mo Yang, Ju-Chul Park, Sungwook Park, Kwan-Yong Lim
Publikováno v:
Journal of Applied Physics. 94:4198-4202
The crystallographic characteristics of an epitaxial C49–TiSi2 island formed on the Si (100) substrate were investigated by high-resolution transmission electron microscopy (HRTEM). The analysis results clearly showed that the optimum epitaxial rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a776388c51c8ad1590a3b7b5431d9e7
https://doi.org/10.1063/1.1604955
https://doi.org/10.1063/1.1604955
Autor:
Yoon-Jik Lee, C. N. Whang, Kwan-Yong Lim, Youn-Seoung Lee, Won-Jun Lee, Yong-Duck Chung, Sa-Kyun Rha
Publikováno v:
Applied Surface Science. 205:128-136
The chemical reaction at the interface between Cu and polyimide (PI) and between Cu and TiN at room temperature has been investigated using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). In case of Cu/TiN, there was no inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::938cddd3ee2a172cbe127815031485b7
https://doi.org/10.1016/s0169-4332(02)01016-4
https://doi.org/10.1016/s0169-4332(02)01016-4
Autor:
Byoung Hun Lee, Hiroaki Niimi, Brian K. Kirkpatrick, Kwan-Yong Lim, Chang Goo Kang, Yonghun Kim, James Walter Blatchford, Young Gon Lee, Jin Ju Kim, Ukjin Jung, Seung Chul Song, Minwoo Kim
Publikováno v:
IEEE Electron Device Letters. 33:1303-1305
Characterization of metal-insulator-metal (MIM) capacitors with a scaled dielectric is a challenge using conventional capacitance-voltage (C-V) measurements due to a high leakage current. In this letter, a method to analyze MIM capacitance that is mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cf2afbbfa59e363b915c7b4972b678f
https://doi.org/10.1109/led.2012.2205213
https://doi.org/10.1109/led.2012.2205213