Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Kwan Sun Yoon"'
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
Recently, 5G and AI are driving the electronic devices to require high-performance computing and high-speed transmission. To support emergence of high speed 5G smartphone in mobile sector, the number of components is trending significantly upward. Te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0608694f66e96ee6a35d3298ff85719b
https://doi.org/10.1109/ectc32862.2020.00297
https://doi.org/10.1109/ectc32862.2020.00297
Autor:
Jong-Young Park, Eun-Chul Ahn, Young-Jae Kim, Joo-Hyoung Noh, Young-Hwan Shin, Kwang-Seop Youm, Kwan-Sun Yoon
Publikováno v:
2019 IEEE 21st Electronics Packaging Technology Conference (EPTC).
The semiconductor industry's push toward continued miniaturization and increasing complexity is driving wider adoption of advanced package technology. Advanced package provides potential solution for systems with better performance and more functions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a613ace15ebb69b005c9c7e12ff2b514
https://doi.org/10.1109/eptc47984.2019.9026634
https://doi.org/10.1109/eptc47984.2019.9026634
Publikováno v:
Molecular Simulation. 34:41-45
We discuss the issue of boron diffusion in biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created strain in silicon by artificially adding a germanium mole fraction to the silicon in order to perform a theo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::265415ed6d0538f1c3897294cf236969
https://doi.org/10.1080/08927020701840051
https://doi.org/10.1080/08927020701840051
Publikováno v:
Molecular Simulation. 34:47-50
In this paper, we report our ab-initio study on indium diffusion in strained Si. We investigated the minimum energy path as well as the migration energy for indium atoms in the hydrostatic strained silicon wherein the strain was incorporated by const
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fba9c6378ae24070eedbc8aa54bea534
https://doi.org/10.1080/08927020801895377
https://doi.org/10.1080/08927020801895377
Publikováno v:
Journal of Nanoscience and Nanotechnology. 7:4084-4088
We discuss the boron diffusion in a biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created a strain in silicon by adding a germanium mole fraction in silicon in order to perform a theoretical analysis. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f41ed3b7fc54c3f093710283c52fb9f7
https://doi.org/10.1166/jnn.2007.18082
https://doi.org/10.1166/jnn.2007.18082
Autor:
Tae Young Won, Kwan Sun Yoon
Publikováno v:
Solid State Phenomena. :1681-1684
In this paper, we present ab-initio study on the energy configurations, minimum energy path (MEP), and migration energy of neutral indium atom during diffusion in silicon crystal. From the ab-initio calculation of electronic structure, we could figur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::103af5ebfb041ff63e1d6cec95127ad5
https://doi.org/10.4028/www.scientific.net/ssp.124-126.1681
https://doi.org/10.4028/www.scientific.net/ssp.124-126.1681
Publikováno v:
Japanese Journal of Applied Physics. 46:2519-2522
We discuss the boron diffusion in a biaxial tensile-strained {001} Si and SiGe layer using the kinetic Monte Carlo (KMC) method. We created strain in silicon by adding a germanium mole fraction to the silicon in order to perform a theoretical analysi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9b9506a3cb54159fca62cc223a63b52
https://doi.org/10.1143/jjap.46.2519
https://doi.org/10.1143/jjap.46.2519
Publikováno v:
2005 International Semiconductor Device Research Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ff0f7b4c6623896cd4ebb27a4ad7357
https://doi.org/10.1109/isdrs.2005.1596158
https://doi.org/10.1109/isdrs.2005.1596158
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d50936ba3d2e15cb9602956cd4223116
https://doi.org/10.7567/ssdm.2006.p-8-14
https://doi.org/10.7567/ssdm.2006.p-8-14