Výsledky vyhledávání - "Kuznetsov, Andrej A."

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Phase glides and self-organization of atomically abrupt interfaces out of stochastic disorder in $\alpha$-Ga$_{2}$O$_{3}$

Autor: Azarov, Alexander, Fernández, Javier García, Zhao, Junlei, He, Ru, Park, Ji-Hyeon, Jeon, Dae-Woo, Prytz, Øystein, Djurabekova, Flyura, Kuznetsov, Andrej

Disorder-induced ordering and unprecedentedly high radiation tolerance in $\gamma$-phase of gallium oxide is a recent spectacular discovery at the intersection of the fundamental physics and electronic applications. Importantly, by far, these data we

Externí odkaz: http://arxiv.org/abs/2409.17829

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Thermal Conductivity of Double Polymorph Ga2O3 Structures

Autor: Abdullaev, Azat, Sekerbayev, Kairolla, Azarov, Alexander, Venkatachalapathy, Vishnukanthan, Chauhan, Vinay S., Utegulov, Zhandos, Kuznetsov, Andrej

Recently discovered double gamma/beta ({\gamma}/\b{eta}) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across interfaces without changing chemical compositions of materials, in

Externí odkaz: http://arxiv.org/abs/2406.03767

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Optical activity and phase transformations in {\gamma}/{\beta} Ga2O3 bilayers under annealing

Autor: Azarov, Alexander, Galeckas, Augustinas, Cora, Ildikó, Fogarassy, Zsolt, Venkatachalapathy, Vishnukanthan, Monakhov, Eduard, Kuznetsov, Andrej

Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spinel (gamma) film on the top of the monoclinic (beta) substrate were fa

Externí odkaz: http://arxiv.org/abs/2405.20011

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Self-assembling of multilayered polymorphs with ion beams

Autor: Azarov, Alexander, Radu, Cristian, Galeckas, Augustinas, Mercioniu, Ionel Florinel, Cernescu, Adrian, Venkatachalapathy, Vishnukanthan, Monakhov, Edouard, Djurabekova, Flyura, Ghica, Corneliu, Zhao, Junlei, Kuznetsov, Andrej

Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may wo

Externí odkaz: http://arxiv.org/abs/2404.19572

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Crystallization Instead of Amorphization in Collision Cascades in Gallium Oxide

Autor: Zhao, Junlei, Fernández, Javier García, Azarov, Alexander, He, Ru, Prytz, Øystein, Nordlund, Kai, Hua, Mengyuan, Djurabekova, Flyura, Kuznetsov, Andrej

Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range periodicity in the solid state. In far-from-equilibrium situations, such as

Externí odkaz: http://arxiv.org/abs/2401.07675

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Universal radiation tolerant semiconductor

Autor: Azarov, Alexander, Fernández, Javier García, Zhao, Junlei, Djurabekova, Flyura, He, Huan, He, Ru, Prytz, Øystein, Vines, Lasse, Bektas, Umutcan, Chekhonin, Paul, Klingner, Nico, Hlawacek, Gregor, Kuznetsov, Andrej

Publikováno v: Nature Communications 14, 4855 (2023)

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very hi

Externí odkaz: http://arxiv.org/abs/2303.13114

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Interplay of the disorder and strain in gallium oxide

Autor: Azarov, Alexander, Venkatachalapathy, Vishnukanthan, Karaseov, Platon, Titov, Andrei, Karabeshkin, Konstantin, Struchkov, Andrei, Kuznetsov, Andrej

Publikováno v: Scientific Reports 12, 15366 (2022)

Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the pre

Externí odkaz: http://arxiv.org/abs/2204.13302

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