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As persistent memory (PM) technologies emerge, hybrid memory architectures combining DRAM with PM bring the potential to provide a tiered, byte-addressable main memory of unprecedented capacity. Nearly a decade after the first proposals for these hyb
Externí odkaz:
http://arxiv.org/abs/2112.12685
Publikováno v:
Izvestiya vysshikh uchebnykh zavedenii Gornyi zhurnal. :116-132
Introduction. Overvoltage caused by single-phase ground short circuits are the main reason of multiple breakdowns of insulation. Assessment and forecast of overvoltage in SPGSC in the 6–10 kV mains is therefore a relevant task, and the solution to