Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kustov DA"'
Autor:
Tereshchenko OE; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia., Golyashov VA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia., Rusetsky VS; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Kustov DA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia., Mironov AV; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Demin AY; CJSC 'Ekran FEP', Novosibirsk 630060, Russia.
Publikováno v:
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2023 Jan 19; Vol. 13 (3). Date of Electronic Publication: 2023 Jan 19.
Autor:
Rusetsky VS; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Golyashov VA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Synchrotron radiation facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia.; Novosibirsk State University, Novosibirsk 630090 Russia., Eremeev SV; Institute of Strength Physics and Materials Science, Tomsk 634055, Russia., Kustov DA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia., Rusinov IP; Tomsk State University, Tomsk 634050, Russia., Shamirzaev TS; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Novosibirsk State University, Novosibirsk 630090 Russia., Mironov AV; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Demin AY; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Tereshchenko OE; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Synchrotron radiation facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia.; Novosibirsk State University, Novosibirsk 630090 Russia.
Publikováno v:
Physical review letters [Phys Rev Lett] 2022 Oct 14; Vol. 129 (16), pp. 166802.
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia. Novosibirsk State University, Novosibirsk, 630090, Russia. Novosibirsk State Technical University, Novosibirsk, 630073, Russia., Nebogatikova NA, Kokh KA, Kustov DA, Soots RA, Golyashov VA, Tereshchenko OE
Publikováno v:
Nanotechnology [Nanotechnology] 2020 Mar 20; Vol. 31 (12), pp. 125602. Date of Electronic Publication: 2019 Nov 28.
Publikováno v:
Transactions on Emerging Telecommunications Technologies; Jun2022, Vol. 33 Issue 6, p1-16, 16p