Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Kushlendra Mishra"'
Autor:
Kushlendra Mishra, Rachit Sharma, Ingo Bork, Zhiheng (Mary) Zuo, Mark Pereira, Samir Bhamidipati, Seshadri Rampoori
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57eee112330fe4fe65145653cbab197e
https://doi.org/10.1117/12.2641833
https://doi.org/10.1117/12.2641833
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aebe566324174c85412849ef1b556d52
https://doi.org/10.1117/12.2641990
https://doi.org/10.1117/12.2641990
Autor:
Rachit Sharma, Zhiheng (Mary) Zuo, Ingo Bork, Archana Rajagopalan, Malavika Sharma, Kushlendra Mishra
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::356fa1811f49ca6e53cae64530b597f6
https://doi.org/10.1117/12.2641760
https://doi.org/10.1117/12.2641760
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b068941189c85248cb0fafd52c1b7fd6
https://doi.org/10.1117/12.2641834
https://doi.org/10.1117/12.2641834
Publikováno v:
37th European Mask and Lithography Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c75569ee12e56498e34db7fc2e86b3d
https://doi.org/10.1117/12.2640001
https://doi.org/10.1117/12.2640001
Publikováno v:
2022 International Workshop on Advanced Patterning Solutions (IWAPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62cc5528e8ed3c37656bf46354e55490
https://doi.org/10.1109/iwaps57146.2022.9972290
https://doi.org/10.1109/iwaps57146.2022.9972290
Autor:
Seungheon Na, Jaekwang Kim, Kushlendra Mishra, Kiwook Park, Peter Buck, Inpyo Kim, Rachit Sharma, Ingo Bork, Dongeun Cha
Publikováno v:
Photomask Technology 2021.
Model-based Mask Process Correction (MPC) is an indispensable data processing step for producing masks for advanced wafer production nodes. Typically, calibration of an MPC model may require several thousands SEM measurements. However, due to metrolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5062d088cb0f56b7076240faa31e5091
https://doi.org/10.1117/12.2600926
https://doi.org/10.1117/12.2600926
Autor:
Malavika Sharma, Ingo Bork, Peter Buck, Charles A. Whiting, Bhardwaj Durvasula, Jed H. Rankin, Rachit Sharma, Ken Jantzen, Joerg Mellmann, Nageswara S. V. Rao, Jianliang Li, Michaela Wentz, Gazi M. Huda, Adam C. Smith, Matthew Leuthold, Robin Chia, Kushlendra Mishra, Daniel M. Hill
Publikováno v:
Photomask Technology 2019.
The bulk of photomask demand is in technology nodes ≥65nm, using equipment, processes, and materials developed more than two decades ago1. Despite mature processes and tools, mask makers are challenged to meet continuing demand. The challenge comes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::267ada551f903afe7ade6f83144333e4
https://doi.org/10.1117/12.2538347
https://doi.org/10.1117/12.2538347
Autor:
Nageswara S. V. Rao, Rachit Sharma, Malavika Sharma, Bhardwaj Durvasula, Ingo Bork, Kushlendra Mishra, Peter Buck
Publikováno v:
Photomask Technology 2019.
With the advancement of semiconductor technology beyond 7nm, the speed and accuracy constraints on computational lithography are tightening. As the mask features become smaller and more complex, Inverse Lithography Technology (ILT) is increasingly be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c9b059a810ad62c88cb8b3230cab39a
https://doi.org/10.1117/12.2538646
https://doi.org/10.1117/12.2538646
Autor:
Mingjing Tian, Peter Buck, Ingo Bork, Rachit Sharma, Malavika Sharma, Nageswara S. V. Rao, Kushlendra Mishra, Shizhi Lyu, Bhardwaj Durvasula, Linna Cong
Publikováno v:
Photomask Technology 2019.
This work presents our investigations on a new resist-slope kernel for Mask Process Correction (MPC) applications, specifically modeling the contribution (including linear and higher-order) of the resist image slope to the overall etch bias. Mask Pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e340f98108707d0836a0f7b44dfe12
https://doi.org/10.1117/12.2536529
https://doi.org/10.1117/12.2536529