Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kushlendra Mishra"'
Autor:
Kushlendra Mishra, Rachit Sharma, Ingo Bork, Zhiheng (Mary) Zuo, Mark Pereira, Samir Bhamidipati, Seshadri Rampoori
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57eee112330fe4fe65145653cbab197e
https://doi.org/10.1117/12.2641833
https://doi.org/10.1117/12.2641833
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aebe566324174c85412849ef1b556d52
https://doi.org/10.1117/12.2641990
https://doi.org/10.1117/12.2641990
Autor:
Rachit Sharma, Zhiheng (Mary) Zuo, Ingo Bork, Archana Rajagopalan, Malavika Sharma, Kushlendra Mishra
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::356fa1811f49ca6e53cae64530b597f6
https://doi.org/10.1117/12.2641760
https://doi.org/10.1117/12.2641760
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b068941189c85248cb0fafd52c1b7fd6
https://doi.org/10.1117/12.2641834
https://doi.org/10.1117/12.2641834
Publikováno v:
37th European Mask and Lithography Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c75569ee12e56498e34db7fc2e86b3d
https://doi.org/10.1117/12.2640001
https://doi.org/10.1117/12.2640001
Publikováno v:
2022 International Workshop on Advanced Patterning Solutions (IWAPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62cc5528e8ed3c37656bf46354e55490
https://doi.org/10.1109/iwaps57146.2022.9972290
https://doi.org/10.1109/iwaps57146.2022.9972290
Autor:
Seungheon Na, Jaekwang Kim, Kushlendra Mishra, Kiwook Park, Peter Buck, Inpyo Kim, Rachit Sharma, Ingo Bork, Dongeun Cha
Publikováno v:
Photomask Technology 2021.
Model-based Mask Process Correction (MPC) is an indispensable data processing step for producing masks for advanced wafer production nodes. Typically, calibration of an MPC model may require several thousands SEM measurements. However, due to metrolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5062d088cb0f56b7076240faa31e5091
https://doi.org/10.1117/12.2600926
https://doi.org/10.1117/12.2600926
Autor:
Nageswara S. V. Rao, Rachit Sharma, Malavika Sharma, Bhardwaj Durvasula, Ingo Bork, Kushlendra Mishra, Peter Buck
Publikováno v:
Photomask Technology 2019.
With the advancement of semiconductor technology beyond 7nm, the speed and accuracy constraints on computational lithography are tightening. As the mask features become smaller and more complex, Inverse Lithography Technology (ILT) is increasingly be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c9b059a810ad62c88cb8b3230cab39a
https://doi.org/10.1117/12.2538646
https://doi.org/10.1117/12.2538646
Autor:
Cong Lu, Ingo Bork, Shizhi Lyu, Delin Mo, Anil Parchuri, Peter Buck, Eric Guo, Mingjing Tian, Kushlendra Mishra, Yifan Li
Publikováno v:
Photomask Technology.
With continuous shrinking technology nodes, the error tolerances for mask CD (critical dimension) becomes tighter and tighter since mask errors are passed on downstream and might even be amplified at wafer level. Therefore, high accuracy MPC (Mask Pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceb51251e57a66ea7e0d9e187b3f646e
https://doi.org/10.1117/12.2280280
https://doi.org/10.1117/12.2280280
Autor:
Christian Bürgel, Kushlendra Mishra, Gek Soon Chua, Peter Buck, Ingo Bork, Sankaranarayanan Paninjath, Keith Standiford
Publikováno v:
SPIE Proceedings.
Shrinking feature sizes and the need for tighter CD (Critical Dimension) control require the introduction of new technologies in mask making processes. One of those methods is the dose assignment of individual shots on VSB (Variable Shaped Beam) mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e53c2ada5f31d854ef8e33d9ba622f5
https://doi.org/10.1117/12.2069617
https://doi.org/10.1117/12.2069617