Zobrazeno 1 - 10
of 2 790
pro vyhledávání: '"Kurz, H."'
Autor:
Lemme, M. C., Echtermeyer, T. J., Baus, M., Szafranek, B. N., Bolten, J., Schmidt, M., Wahlbrink, T., Kurz, H.
Publikováno v:
Solid State Electronics, Vol. 52. Issue 4, pp. 514-518, 2008
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single-
Externí odkaz:
http://arxiv.org/abs/0809.5099
Publikováno v:
IEEE Electron Device Letters, Vol. 29, Iss. 8, pp. 952-954, Aug. 2008
The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by controlle
Externí odkaz:
http://arxiv.org/abs/0805.4095
Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modification of graphene such that its conductance changes by more than six
Externí odkaz:
http://arxiv.org/abs/0712.2026
Publikováno v:
IEEE Electron Device Letters, Vol. 28, No. 4, April 2007
In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS str
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703208
Publikováno v:
Phys. Rev. B 71, 155110 (2005)
A time-resolved analysis of the amplitude and phase of THz pulses propagating through three-dimensional photonic crystals is presented. Single-cycle pulses of THz radiation allow measurements over a wide frequency range, spanning more than an octave
Externí odkaz:
http://arxiv.org/abs/cond-mat/0412044
Publikováno v:
In Procedia CIRP 2014 18:74-79
Publikováno v:
Science, 1999 Sep 01. 285(5433), 1551-1553.
Externí odkaz:
https://www.jstor.org/stable/2898112
Publikováno v:
In Microelectronic Engineering November 2013 111:220-223
Publikováno v:
In Microelectronic Engineering October 2013 110:403-407
Akademický článek
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