Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Kurt Scheerschmidt"'
Publikováno v:
Crystal Research and Technology. 50:490-498
Understanding the atomic processes governing the formation a heteroepitaxial interface is central to predict and control the basic physical and chemical properties of a variety of hetero-structures. With this perspective, we address in this work the
Autor:
Kurt Scheerschmidt
Publikováno v:
Ultramicroscopy. 110:543-547
The direct object retrieval via the linearized inversion of the dynamical scattering matrix is extended using a second order perturbation theory and including mixed type potentials. The higher order perturbation increases the confidence region extrac
Autor:
Volker Kuhlmann, Kurt Scheerschmidt
Publikováno v:
International Journal of Materials Research. 98:1081-1085
Molecular dynamics simulations using empirical potentials have been performed to describe atomic interactions during the relaxation of nanostructures. To include the quantum mechanical nature of atomic bonding a tight-binding based bond order potenti
Autor:
M. Werner, Kurt Scheerschmidt
Publikováno v:
physica status solidi (a). 202:2368-2375
Carbon supersaturation and high density of twin lamellae influence the physical properties of multi-crystalline silicon and restrict its applicability as a material in photovoltaics. To understand, e.g., the resulting structural modifications and the
Autor:
Kurt Scheerschmidt, Volker Kuhlmann
Publikováno v:
Interface Science. 12:157-163
Molecular dynamics simulations using empirical potentials have been performed to describe atomic interactions at interfaces created by macroscopic wafer bonding. Misalignment due to relative twist rotation of the wafers influences the bondability of
Publikováno v:
Computational Materials Science. 24:33-41
Molecular dynamics simulations using empirical potentials have been employed to describe atomic interactions at interfaces created by the macroscopic wafer bonding process. Investigating perfect or distorted surfaces of different semiconductor materi
Publikováno v:
Computational Materials Science. 22:56-61
Molecular dynamics simulations using tight-binding methods or based on an empirical potential derived from the tight-binding approximation have been employed to describe atomic interactions at interfaces created by the macroscopic wafer bonding proce
Publikováno v:
Applied Surface Science. 179:49-54
The adsorption of carbon trimers on Si(1 1 1) 1×1 is investigated by means of empirical molecular dynamics based on a Tersoff potential. A priori unknown carbon terminated Si(1 1 1) surfaces are modeled. The energetics of different adsorption sites,
Publikováno v:
Journal of Applied Physics. 88:7104-7109
Empirical molecular dynamics simulations based on the Tersoff potential are carried out for SiC(0001) surfaces and bonded interfaces. It is demonstrated that such a classical interatomic potential is able to correctly describe SiC-4H (0001)3×3 and 3
Autor:
Peter Werner, N.D. Zakharov, Marius Grundmann, Reinald Hillebrand, Kurt Scheerschmidt, Richard P. Schneider
Publikováno v:
Crystal Research and Technology. 35:759-768
Quantum dot structures have gained increasing interest in materials science due to their special electrical and optical behavior. A combination of electron-opti cal techniques is applied to correlate such properties with the morphology and structure