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pro vyhledávání: '"Kurt R. Kimmel"'
Autor:
Kurt R. Kimmel
Publikováno v:
25th European Mask and Lithography Conference.
An advanced photomask is rarely made meeting all specifications in one attempt. In the photomask industry, yield is the critical component to all key performance measures including cost and delivery time. Defect-free advanced masks are extremely diff
Autor:
Kurt R. Kimmel, Brid Connolly, Craig West, Ingo Hoellein, Jan Hendrick Peters, Paul W. Ackmann
Publikováno v:
Photomask Technology 2008.
Traditionally, definition of mask specifications is done completely by the mask user, while characterization of the mask relative to the specifications is done completely by the mask maker. As the challenges of low-k1 imaging continue to grow in scop
Autor:
Ryoung-han Kim, Hiroyuki Mizuno, Bart Kessels, Robert Routh, Emil Schmit-Weaver, John C. Arnold, Kevin Cummings, Uzodinma Okoroanyanwu, Bruno M. LaFontaine, Andre van Dijk, Tom Wallow, Kurt R. Kimmel, Dave Medeiros, Chiew-seng Koay, Obert R. Wood, Michael Crouse, Yunfei Deng, Cyrus E. Tabery, Brian Niekrewicz, Judy Galloway, Karen Petrillo, Satyavolu S. Papa Rao, Youri van Dommelen, Sjoerd Lok, Brian Lee, Anna Tchikoulaeva, Yunpeng Yin, Harry J. Levinson, James Word, Bill Pierson, Don Canaperi, Rolf Seltmann, Matthew E. Colburn, Erin Mclellan, Sang-In Han, Sarah N. McGowan, Sander Bouten
Publikováno v:
SPIE Proceedings.
In this paper, we describe the integration of EUV lithography into a standard semiconductor manufacturing flow to produce demonstration devices. 45 nm logic test chips with functional transistors were fabricated using EUV lithography to pattern the f
Initial experience establishing an EUV baseline lithography process for manufacturability assessment
Autor:
B. La Fontaine, Greg Denbeaux, Dario L. Goldfarb, Michael Tittnich, Tom Wallow, Robert L. Brainard, Yayi Wei, Warren Montgomery, Jeff Mackey, Patrick P. Naulleau, Sven Trogisch, Uzodinma Okoroanyanwu, Chiew-seng Koay, Frank Goodwin, D. Back, Kurt R. Kimmel, Obert R. Wood, Bill Pierson, John G. Hartley, Karen Petrillo, Brian Martinick
Publikováno v:
SPIE Proceedings.
The International Venture for Nanolithography (INVENT) initiative announced in mid 2005, a unique industry-university consortium between the College of Nanoscale Science and Engineering at Albany and a group of leading edge integrated device manufact
Autor:
Takashi Chiba, Steven J. Holmes, Tsutomu Shimokawa, Dario Gil, Karen Petrillo, Peggy Lawson, Christopher F. Robinson, Gary Dabbagh, Rex Chen, Ranee Kwong, Kaushal Patel, Kurt R. Kimmel, Wenjie Li, Mark Slezak, Rao Varanasi
Publikováno v:
SPIE Proceedings.
To make immersion lithography a reality in manufacturing, several challenges related to materials and defects must be addressed. Two such challenges include the development of water immersion compatible materials, and the vigorous pursuit of defect r
Autor:
Kurt R. Kimmel, Michael J. Lercel
Publikováno v:
Handbook of Photomask Manufacturing Technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfcc3e1ae3d6a2c4c397a5b999ff163e
https://doi.org/10.1201/9781420028782.ch9
https://doi.org/10.1201/9781420028782.ch9
Autor:
Michael J. Lercel, Juan C. Ivaldi, Timothy O'Neil, Timothy A. Brunner, Diane McCafferty, Christopher F. Robinson, Keith W. Andresen, Kurt R. Kimmel, Michael S. Hibbs, Harry Sewell, Nakgeuon Seong
Publikováno v:
SPIE Proceedings.
157 nm has been explored as a lithographic technology for several years on small field imaging tools with encouraging results. Significant progress has occurred in tool platform design, resist performance, and optical material quality. However, a maj
Publikováno v:
SPIE Proceedings.
Alternating phase shift reticles are one proposed solution for printing features required at the 90 nm and 65 nm nodes using 193 nm lithography. A key enabler to the adoption of this technology is defect inspection so as to guarantee defect free reti
Autor:
Kurt R. Kimmel
Publikováno v:
SPIE Proceedings.
Microelectronics industry leaders routinely name mask technology and mask supply issues of cost and cycle time as top issues of concern. A survey was initiated in 2002 with support from International SEMATECH (ISMT) and administered by SEMI North Ame
Autor:
Nishrin Kashwala, Long He, Larry S. Zurbrick, Kurt R. Kimmel, Stanley E. Stokowski, Maciej W. Rudzinski
Publikováno v:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents.
Alternating Phase Shift Masks (altPSM's) are an option for the production of critical layers at the 100 nm technology node and below. Successful implementation of altPSM's into a wafer manufacturing process depends upon the ability to successfully in