Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Kurt H. Weiner"'
Autor:
Paul G. Carey, Somit Talwar, Karl-Josef Kramer, Emi Ishida, Thomas W. Sigmon, Kurt H. Weiner, D. Ashkenas
Publikováno v:
Applied Physics A Solids and Surfaces. 57:91-95
A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si1−x Ge x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbf8089d6e891152c7d56b2e383f242f
https://doi.org/10.1007/bf00331223
https://doi.org/10.1007/bf00331223
Publikováno v:
Applied Surface Science. 69:121-126
A pulsed XeCl excimer laser is used to grow ideally strained heteroepitaxial Si1-xGex/Si layers with Ge fractions up to 21% by intermixing a structure of electron beam evaporated a-Ge on Si(100). The rapid regrowth process induces an interfacial grad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b31f5af5b650fcb6d7e3ded6bacb7211
https://doi.org/10.1016/0169-4332(93)90492-t
https://doi.org/10.1016/0169-4332(93)90492-t
Publikováno v:
Microelectronic Engineering. 20:107-130
In this paper we review the development of nanosecond thermal diffusion (NTD), a new doping technology which utilizes excimer-laser-induced heating to incorporate and diffuse impurities in silicon wafers. With thermal anneals less than 200 ns in dura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e50482bef6d1fb6fbe2232ae9ad2381
https://doi.org/10.1016/0167-9317(93)90210-v
https://doi.org/10.1016/0167-9317(93)90210-v
Publikováno v:
IEEE Electron Device Letters. 17:461-463
In this letter we report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser doping (GILD). Statistics for diodes with junction depths of 39 nm and 50 nm, surface concentrations exceeding 10/sup 20/ atom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21a7c349d5ef1cdf2cd57d948533dd83
https://doi.org/10.1109/55.537075
https://doi.org/10.1109/55.537075
Autor:
Keith A. Benton, Isabella T. Lewis, Somit Talwar, K.‐Josef Kramer, John E. Davison, Kenneth Williams, Kurt H. Weiner
Publikováno v:
Applied Physics Letters. 68:2320-2322
The selective fabrication of ultrashallow p+/n junctions in silicon using projection gas immersion laser doping is reported. The method offers substantial improvement and simplification in junction formation to integrated circuit manufacturers, since
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73edca903a3cbd341c96937a70281c79
https://doi.org/10.1063/1.115844
https://doi.org/10.1063/1.115844
Publikováno v:
Applied Physics Letters. 65:1709-1711
High quality heteroepitaxial regrowth of arsenic‐implanted a‐Si on Si1−xGex layers with Ge fractions between 0 and 0.2 is accomplished using pulsed laser induced epitaxy (PLIE). The structures of boron‐doped Si1−xGex on Si(100) are created
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48bc97b9cf68ea8dec64c66dae3b1215
https://doi.org/10.1063/1.112893
https://doi.org/10.1063/1.112893
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
With the recent advances in low-energy ion implantation, the challenges for device manufacturers become how to anneal the implant damage and how to electrically activate implanted dopants. Current rapid thermal processes cause undesired dopant diffus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c251d749c277332177b377a307a33bd8
https://doi.org/10.1109/iit.1998.813892
https://doi.org/10.1109/iit.1998.813892
Publikováno v:
Applied Physics Letters. 61:769-771
Heteroepitaxy of Si1−xGex/Si alloy layers on Si (100) substrates has been achieved using pulsed laser induced epitaxy (PLIE). The energy of 1 to 20 pulses from a spatially homogenized XeCl excimer laser beam is used to melt a structure consisting o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b35d64f27805ec77174c2341a4295c1b
https://doi.org/10.1063/1.107793
https://doi.org/10.1063/1.107793
Publikováno v:
IEEE Electron Device Letters. 13:369-371
Gas immersion laser doping (GILD) was used to fabricate p/sup +/-n diodes with 300-AA junction depth. These diodes exhibit ideality factors of 1.01-1.05 over seven decades of current, reverse leakage current densities >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0284df1bd4cc269758cd8a825c5d583
https://doi.org/10.1109/55.192758
https://doi.org/10.1109/55.192758
Publikováno v:
Applied Physics Letters. 56:1844-1846
Heteroepitaxial InxGa1−xAs/GaAs structures have been formed for the first time by pulsed laser induced mixing of molecular beam epitaxy deposited In films (∼200 A) on GaAs (100) substrates. The process occurs by a melt‐induced, rapid‐mixing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22023f51792e32d1227e99f27427c64a
https://doi.org/10.1063/1.103065
https://doi.org/10.1063/1.103065