Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kurt A. Tallman"'
Autor:
Marwan H. Khater, Keith Macha, Bob Liedy, Renata Camillo-Castillo, John J. Pekarik, Philip V. Kaszuba, Qizhi Liu, Bjorn Zetterlund, Leon Moszkowicz, Peng Cheng, James W. Adkisson, Kurt A. Tallman, Peter B. Gray, David L. Harame
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
In this paper, we discuss a novel technique to reduce base resistance (R b ) and collector-base capacitance (C cb ) for higher F max in high-speed SiGe HBTs. In order to reduce C cb , we first located the origins of the different components of C cb t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30d6c150efa618b96296cd6b8a710943
https://doi.org/10.1109/bctm.2012.6352616
https://doi.org/10.1109/bctm.2012.6352616
Autor:
E. Eld, D. Sunderland, H. Ng, T. Cotler, S. Subbanna, B. Chen, Asit Kumar Ray, S. Wu, Emmanuel F. Crabbe, Jonathan Z. Sun, J. Snare, Vincent J. McGahay, L. Su, Kurt A. Tallman, M.J. Saccamango, J. Lasky, R. Schulz, Paul D. Agnello, Stephen E. Greco, Bijan Davari, A.J. Allen
Publikováno v:
International Electron Devices Meeting. Technical Digest.
In this work, we demonstrate a 6.9 sq. /spl mu/m embedded SRAM cell in a 0.25 /spl mu/m physical design-rule salicide high-performance CMOS technology. The scalability of this salicide-CMOS embedded-SRAM technology is demonstrated by functionality of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9fb7ecb85f9e8f74837c1dc548da5b5
https://doi.org/10.1109/iedm.1996.553583
https://doi.org/10.1109/iedm.1996.553583
Autor:
S.-J. Jeng, T. Tice, J. Malinowski, K. Stein, C. Kermarrec, D. Nguyen-Ngoc, Emmanuel F. Crabbe, Kathryn T. Schonenberg, John D. Cressler, Kurt A. Tallman, M. Gilbert, David L. Harame, K. Walter, T. Houghton, Bernard S. Meyerson, Robert A. Groves, James H. Comfort, B. Cunningham, D. Colavito, G. Fitzgibbons, S. Subbanna, N. Greco, G.D. Berg, T. Kebede, G. Hueckel
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
If SiGe-HBT technology is to successfully compete with GaAs technology in the rapidly emerging wireless communications market, it must demonstrate comparable performance, higher integration levels, compatibility with high volume production, and hence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dfe3fa3cd6387b73a86c571b85e1a00
https://doi.org/10.1109/iedm.1994.383374
https://doi.org/10.1109/iedm.1994.383374
Autor:
M. Gilbert, David L. Harame, Mehmet Soyuer, Kathryn T. Schonenberg, Kurt A. Tallman, S.-J. Jeng, J. Malinowski, D. Colavito, D.A. Sunderland, Kenneth J. Stein, Bernard S. Meyerson, Robert A. Groves, G.D. Berg, S. Subbanna, S. Wu, D. Nguyen-Ngoc
Publikováno v:
Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.
A BiCMOS technology including 0.25 /spl mu/m electrical channel length (L/sub EFF/) nFET and pFET CMOS devices and 60 GHz f/sub max/ SiGe-HBT transistors has been achieved on 200 mm wafers. Both CMOS circuits and SiGe-HBT analog circuits were fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cc6f23d03ec76e3954ef60170c87df4
https://doi.org/10.1109/bipol.1995.493873
https://doi.org/10.1109/bipol.1995.493873