Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Kurt A. Moen"'
Autor:
Kurt A. Moen, Hurwitz Paul D
Publikováno v:
2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
A novel RF switch branch design and layout is proposed to reduce on-state second harmonic nonlinearity. We have demonstrated a 2.5X reduction in the second harmonic power in RF-SOI and SiGe BiCMOS bulk technologies that serve the wireless front-end m
Autor:
S.D. Phillips, Kurt A. Moen
Publikováno v:
Extreme Environment Electronics ISBN: 9781315216911
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a048f601dffb5a8eb897ef9efac89369
https://doi.org/10.1201/b13001-44
https://doi.org/10.1201/b13001-44
Autor:
S.D. Phillips, Kurt A. Moen
Publikováno v:
Extreme Environment Electronics ISBN: 9781315216911
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33d28ec162bdd40849d99c179d008c04
https://doi.org/10.1201/b13001-32
https://doi.org/10.1201/b13001-32
Autor:
Kurt A. Moen, John D. Cressler
Publikováno v:
Extreme Environment Electronics ISBN: 9781315216911
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f9255f8271f493d795f291c6508463a
https://doi.org/10.1201/b13001-10
https://doi.org/10.1201/b13001-10
Autor:
Akil K. Sutton, John D. Cressler, Nelson E. Lourenco, Zachary E. Fleetwood, Kurt A. Moen, Dale McMorrow, Troy D. England, Nicolas Roche, Pauline Paki, Stephen P. Buchner, J. H. Warner, Rajan Arora, Adilson S. Cardoso, Greg Freeman
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4405-4411
This paper uses charge deposition by two-photon absorption to present the first investigation of the physical mechanisms underlying the single event transient (SET) response of cascode structures in a 45-nm RF-CMOS/SOI technology, provides the first
Autor:
Nelson E. Lourenco, Zachary E. Fleetwood, S.D. Phillips, Stephen P. Buchner, Dale McMorrow, Marek Turowski, Ashok Raman, Troy D. England, Kurt A. Moen, Pauline Paki-Amouzou, Jeffrey H. Warner, John D. Cressler, David L. Harame, Adilson S. Cardoso, Jack Pekarik
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4175-4183
The single-event effect sensitivity of fourth-generation, 90 nm SiGe HBTs is investigated. Inverse-mode, ≥1.0 Gbps SiGe digital logic using standard, unoptimized, fourth-generation SiGe HBTs is demonstrated and the inverse-mode shift register exhib
Publikováno v:
IEEE Transactions on Electron Devices. 60:34-41
We use predictive technology computer-aided design to investigate the device design challenges and optimization issues that will be necessarily encountered in scaling of complementary silicon-germanium (C-SiGe) heterojunction bipolar transistors (HBT
Publikováno v:
IEEE Transactions on Nuclear Science. 59:2682-2690
The single-event effect sensitivity of inverse-mode biased SiGe HBTs in both bulk and SOI technology platforms are investigated, for the first time, using digital circuits and stand-alone device test structures. Comparisons of heavy-ion broad beam da
Publikováno v:
IEEE Transactions on Electron Devices. 59:2895-2901
We study mixed-mode stress degradation in SiGe HBTs using a novel physical TCAD model in which the processes of hot carrier generation within the semiconductor, carrier propagation to the oxide interface, and formation of interface traps are directly
Publikováno v:
2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
Improvements in foundry RF and mm-wave Si offerings over the last several years have allowed it to take market share from III-V processes for TX / RX applications. The increased RF switch content in handsets is now dominated by RF-SOI which also supp