Increasing the radiation resistance of single-crystal silicon epitaxial layers

Autor: Kurmashev Sh. D., Kulinich O. A., Brusenskaya G. I., Verem’eva A. V.

Publikováno v: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 57-62 (2014)

The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before th

Externí odkaz: https://doaj.org/article/b4925e9c224142b39f267e8439fb09e9

PHOTODETECTOR ON THE BASE OF UNIJUNCTION AND FIELD-EFFECT PHOTOTRANSISTORS

Autor: Vikulin, I. M., Kurmashev, Sh. D., Mingalov, V. A.

Publikováno v: Sensor Electronics and Microsystem Technologies; Том 3, № 4 (2006); 28-30
Сенсорная электроника и микросистемные технологии; Том 3, № 4 (2006); 28-30
Сенсорна електроніка і мікросистемні технології; Том 3, № 4 (2006); 28-30

Characteristics of the light converter with the frequency output on the base of the unijunction transistor were investigated. The field-effect transistor instead of resistor in the emitter circuit of the unijunction transistor was used for increase o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=scientific_p::4cf7cf97659b77eee656f6610aa6b72f
http://semst.onu.edu.ua/article/view/112797

BRIDGE SENSORS BASED ON FIELD-EFFECT TRANSISTORS

Autor: Vikulin, I. M., Kurmashev, SH. D., Veremyova, A. V.

Publikováno v: Photoelectronics; № 23 (2014); 136-141

Possibility of the use of the field-effect transistors is considered in the bridge sensors of the magnetic field, temperature and light. It is shown that maximum sensitivity is attained in the sensor bridge circuit, where the elements in the four arm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=scientific_p::21492b867e584964283eccbb30255205
http://photoelectronics.onu.edu.ua/article/view/158630

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The sensitivity of photovoltaic cells based on cadmium sulfide in the short-wave region of the spectrum

Autor: Drozdov, V. A., Kurmashev, Sh. D., Rvachev, A. L.

Publikováno v: Russian Physics Journal; May 1966, Vol. 9 Issue: 3 p49-50, 2p