Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Kurmantayev, A."'
RAN-agnostic communications can identify intrinsic features of the unknown signal without any prior knowledge, with which incompatible RANs in the same unlicensed band could achieve better coexistence performance than today's LBT-based coexistence. B
Externí odkaz:
http://arxiv.org/abs/2211.12287
Akademický článek
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Autor:
Kurbanbekov, Sherzod, Rakhadilov, Bauyrzhan, Kakimzhanov, Dauir, Seitov, Bekbolat, Katpaeva, Karakoz, Kurmantayev, Abil, Dautbekov, Merkhat, Kengesbekov, Aidar
Publikováno v:
Coatings (2079-6412); Aug2024, Vol. 14 Issue 8, p1030, 12p
Publikováno v:
Eur. Phys. Jour. B, vol. 86, issue 7, p. 312 (2013)
Here we consider an interacting electron-phonon system within the framework of extended Holstein-Hubbard model at strong enough electron-phonon interaction limit in which (bi)polarons are the essential quasiparticles of the system. It is assumed that
Externí odkaz:
http://arxiv.org/abs/1308.2331
Akademický článek
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Autor:
Tajibay Saparbaev, telecommunications named after Gumarbek Daukeyev, Abil Kurmantayev, Gulnoza Saburova, Mehribon Otajonova, Bakhrom Yavidov, Sagyn Tulepbergenov, Elzira Kutkeldiyeva
Publikováno v:
Theoretical & Applied Science. 92:263-272
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::512d06448a450dc425d5c49e1a113ded
https://doi.org/10.15863/tas.2020.12.92.52
https://doi.org/10.15863/tas.2020.12.92.52
Publikováno v:
Physics of the Solid State. 55:45-53
Films of the solid solutions Si1 − xSnx (0 ≤ x ≤ 0.04) on Si substrates have been grown by liquid phase epitaxy. The structural features of the films have been investigated using X-ray diffraction. The temperature behavior of current-voltage ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1d5efe2444efeee89917e3458a423c2
https://doi.org/10.1134/s1063783413010290
https://doi.org/10.1134/s1063783413010290
Publikováno v:
International Journal of Modern Physics B. 21:169-178
Metal-insulator transitions (MITs) in doped uncompensated systems are investigated in the Mott–Hubbard and Anderson impurity models by considering the intercarrier correlation and screening effect of carriers in the same hydrogenic impurity center,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8816fe1762a09f127f92ae6960498a6
https://doi.org/10.1142/s0217979207036552
https://doi.org/10.1142/s0217979207036552
Here we consider an interacting electron-phonon system within the framework of extended Holstein-Hubbard model at strong enough electron-phonon interaction limit in which (bi)polarons are the essential quasiparticles of the system. It is assumed that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57428ca92d8ae02db7869168228d0ce1
Publikováno v:
Journal of Materials Science Research. 1
Epitaxy layers of solid solution (ZnSe)1-x-y(Si2)x(GaP)y (0 х 0.03, 0 y 0.09) were grown up from the limited volume of tin solution-melting by method of liquid phase epitaxy. Profiles of distribution of components Ga, P, Zn, Se and S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3cce0980866db4addfe53011d40ae3d
https://doi.org/10.5539/jmsr.v1n2p150
https://doi.org/10.5539/jmsr.v1n2p150