Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kurkina II"'
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Novosibirsk State Technical University, 20 K. Marx str., Novosibirsk 630073, Russia., Seleznev VA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Voloshin BV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Volodin VA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Physical Department, Novosibirsk State University, 1 Pirogov str., Novosibirsk 630090, Russia., Kurkina II; Institute of Physics and Technologies, North-Eastern Federal University, 58 Belinsky str., Yakutsk 677027, Russia.
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2023 Nov 29; Vol. 25 (46), pp. 32132-32141. Date of Electronic Publication: 2023 Nov 29.
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia. Novosibirsk State University, 630090, Novosibirsk, Russia., Kurkina II, Nebogatikova NA, Komonov AI, Smagulova SA
Publikováno v:
Nanotechnology [Nanotechnology] 2017 Feb 17; Vol. 28 (7), pp. 074001. Date of Electronic Publication: 2017 Jan 13.
Autor:
Nebogatikova NA; Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, 13, Acad. Lavrentyev Avenue, Russia., Antonova IV, Kurkina II, Soots RA, Vdovin VI, Timofeev VB, Smagulova SA, Prinz VY
Publikováno v:
Nanotechnology [Nanotechnology] 2016 May 20; Vol. 27 (20), pp. 205601. Date of Electronic Publication: 2016 Apr 04.
Autor:
Nebogatikova NA; Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division, Acad. Lavrent'ev Avenue, 13., 630090, Novosibirsk, Russian Federation. nadonebo@gmail.com., Antonova IV, Prinz VY, Kurkina II, Vdovin VI, Aleksandrov GN, Timofeev VB, Smagulova SA, Zakirov ER, Kesler VG
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2015 May 28; Vol. 17 (20), pp. 13257-66.