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pro vyhledávání: '"Kurganova, E."'
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Autor:
van Elferen, H. J., Veligura, A., Tombros, N., Kurganova, E. V., van Wees, B. J., Maan, J. C., Zeitler, U.
Publikováno v:
Phys. Rev. B 88, 121302(R) (2013)
Magneto-transport experiments on ABC-stacked suspended trilayer graphene reveal a complete splitting of the twelve-fold degenerated lowest Landau level, and, in particular, the opening of an exchange-driven gap at the charge neutrality point. A quant
Externí odkaz:
http://arxiv.org/abs/1304.0866
Autor:
Kurganova, E. V., Wiedmann, S., Giesbers, A. J. M., Gorbachev, R. V., Novoselov, K. S., Katsnelson, M. I., Tudorovskiy, T., Maan, J. C., Zeitler, U.
Publikováno v:
Phys. Rev. B 87, 085447 (2013)
We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental value $s
Externí odkaz:
http://arxiv.org/abs/1302.2014
Autor:
van Elferen, H. J., Veligura, A., Kurganova, E. V., Zeitler, U., Maan, J. C., Tombros, N., Vera-Marun, I. J., van Wees, B. J.
Publikováno v:
Phys. Rev. B 85, 115408 (2012)
We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher f
Externí odkaz:
http://arxiv.org/abs/1112.5368
Autor:
Wiedmann, S., van Elferen, H. J., Kurganova, E. V., Katsnelson, M. I., Giesbers, A. J . M., Veligura, A., van Wees, B. J., Gorbachev, R. V., Novoselov, K. S., Maan, J. C., Zeitler, U.
Publikováno v:
Phys. Rev. B 84, 115314 (2011)
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the ch
Externí odkaz:
http://arxiv.org/abs/1107.3929
Autor:
Kurganova, E. V., van Elferen, H. J., McCollam, A., Ponomarenko, L. A., Novoselov, K. S., Veligura, A., van Wees, B. J., Maan, J. C., Zeitler, U.
Publikováno v:
Phys. Rev. B 84, 121407(R) (2011)
We have measured the spin splitting in single-layer and bilayer graphene by means of tilted magnetic field experiments. Applying the Lifshitz-Kosevich formula for the spin-induced decrease of the Shubnikov de Haas amplitudes with increasing tilt angl
Externí odkaz:
http://arxiv.org/abs/1107.3925
Autor:
Leicht, C., Mirovsky, P., Kaestner, B., Hohls, F., Kashcheyevs, V., Kurganova, E. V., Zeitler, U., Weimann, T., Pierz, K., Schumacher, H. W.
Publikováno v:
Semicond. Sci. Technol. 26, 055010 (2011)
We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron g
Externí odkaz:
http://arxiv.org/abs/1009.5897
Autor:
Kurganova, E. V., Giesbers, A. J. M., Gorbachev, R. V., Geim, A. K., Novoselov, K. S., Maan, J. C., Zeitler, U.
Publikováno v:
Solid State Communications 150, 2209-2211 (2010)
We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $\nu=\pm4$ and $\nu=\pm8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Lan
Externí odkaz:
http://arxiv.org/abs/1009.5485
Autor:
Kaestner, B., Leicht, C., Mirovsky, P., Kashcheyevs, V., Kurganova, E. V., Zeitler, U., Pierz, K., Schumacher, H. W.
Publikováno v:
AIP Conf. Proc. 1399, 345 (2010)
We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to
Externí odkaz:
http://arxiv.org/abs/1007.2062
Autor:
Frolov, A. S., Kurganova, E. A., Sapunov, V. N., Kozlovskii, R. A., Koshel', G. N., Yarkina, E. M.
Publikováno v:
Kinetics & Catalysis; Dec2023, Vol. 64 Issue 6, p750-758, 9p
