Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Kure, Thomas"'
Autor:
Kure, Thomas
In a systematic study of antimony-doped zinc oxide nanowires with different doping concentrations, a distinct emission line in photoluminescence spectroscopy at 3.3642 eV can be attributed to a bound exciton involving an antimony impurity. In a furth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______793::650e1e716b95dbb5e495c7ae69a533df
https://depositonce.tu-berlin.de/handle/11303/16563
https://depositonce.tu-berlin.de/handle/11303/16563
Autor:
Nippert, Felix, Nirschl, Anna, Schulz, Tobias, Callsen, Gordon, Pietzonka, Ines, Westerkamp, Steffen, Kure, Thomas, Nenstiel, Christian, Strassburg, Martin, Albrecht, Martin, Hoffmann, Axel
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 21, p215707-1-215707-6, 6p, 3 Diagrams, 4 Graphs
Autor:
Nippert, Felix, Tollabi Mazraehno, Mohammad, Davies, Matthew J., Hoffmann, Marc P., Lugauer, Hans-Jürgen, Kure, Thomas, Kneissl, Michael, Hoffmann, Axel, Wagner, Markus R.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 113, 071107 (2018) and may be found at https://doi.org/10.1063/1.5044383. We sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______793::4d638904e11700cd2880b5dcd451c840
https://depositonce.tu-berlin.de/handle/11303/10836
https://depositonce.tu-berlin.de/handle/11303/10836
Autor:
Kirste, Ronny, Collazo, Ramón, Callsen, Gordon, Wagner, Markus R., Kure, Thomas, Sebastian Reparaz, Juan, Mita, Seji, Xie, Jinqiao, Rice, Anthony, Tweedie, James, Sitar, Zlatko, Hoffmann, Axel
Publikováno v:
Journal of Applied Physics; Nov2011, Vol. 110 Issue 9, p093503, 9p, 1 Black and White Photograph, 1 Diagram, 8 Graphs
Autor:
Nippert, Felix, Karpov, Sergey, Pietzonka, Ines, Galler, Bastian, Wilm, Alexander, Kure, Thomas, Nenstiel, Christian, Callsen, Gordon, Strassburg, Martin, Lugauer, Hans-Jürgen
We suggest a novel technique for the evaluation of the recombination coefficients corresponding to Shockley–Read–Hall, radiative, and Auger recombination that occur in InGaN/GaN-based light-emitting diodes (LEDs). This technique combines the meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______793::df1c60ad5c291665f1e113addaf95c32
http://depositonce.tu-berlin.de/handle/11303/6377
http://depositonce.tu-berlin.de/handle/11303/6377
Autor:
Nippert, Felix, Karpov, Sergey Yu., Callsen, Gordon, Galler, Bastian, Kure, Thomas, Nenstiel, Christian, Wagner, Markus R., Strassburg, Martin, Lugauer, Hans-Jürgen, Hoffmann, Axel
We obtain temperature-dependent recombination coefficients by measuring the quantum efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes. This allows us to gain insight into the physical processes limiting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______793::8879bb0ff23ce78b0d18acf0f89de99c
http://depositonce.tu-berlin.de/handle/11303/6378
http://depositonce.tu-berlin.de/handle/11303/6378
Akademický článek
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Autor:
Teherani, Ferechteh H., Look, David C., Rogers, David J., Wagner, Markus R., Reparaz, Juan Sebastian, Callsen, Gordon, Nippert, Felix, Kure, Thomas, Hoffmann, Axel, Hugues, Maxime, Teysseire, Monique, Damilano, Benjamin, Chauveau, Jean-Michel
Publikováno v:
Proceedings of SPIE; February 2017, Vol. 10105 Issue: 1 p101050P-101050P-1, 909452p
Akademický článek
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