Zobrazeno 1 - 10
of 195
pro vyhledávání: '"Kurdak, Ç."'
Publikováno v:
Phys. Rev. Applied 9, 044006 (2018)
We introduce a new resistance measurement method that is useful in characterizing materials with both surface and bulk conduction, such as three-dimensional topological insulators. The transport geometry for this new resistance measurement configurat
Externí odkaz:
http://arxiv.org/abs/1708.05762
Autor:
Wolgast, S., Eo, Y. S., Sun, K., Kurdak, Ç., Balakirev, F. F., Jaime, M., Kim, D. -J., Fisk, Z.
Publikováno v:
Phys. Rev. B 95, 245112 (2017)
SmB$_6$ exhibits a small (15-20 meV) bandgap at low temperatures due to hybridized $d$ and $f$ electrons, a tiny (3 meV) transport activation energy $(E_{A})$ above 4 K, and surface states accessible to transport below 2 K. We study its magnetoresist
Externí odkaz:
http://arxiv.org/abs/1610.07721
Autor:
Denlinger, J. D., Jang, Sooyoung, Li, G., Chen, L., Lawson, B. J., Asaba, T., Tinsman, C., Yu, F., Sun, Kai, Allen, J. W., Kurdak, C., Kim, Dae-Jong, Fisk, Z., Li, Lu
The mixed valent compound SmB6 is of high current interest as the first candidate example of topologically protected surface states in a strongly correlated insulator and also as a possible host for an exotic bulk many-body state that would manifest
Externí odkaz:
http://arxiv.org/abs/1601.07408
Topological insulators (TIs) have the singular distinction of being electronic insulators while harboring metallic, conductive surfaces. In ordinary materials, defects such as cracks and deformations are barriers to electrical conduction, intuitively
Externí odkaz:
http://arxiv.org/abs/1506.08233
Akademický článek
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Autor:
Li, G., Xiang, Z., Yu, F., Asaba, T., Lawson, B., Cai, P., Tinsman, C., Berkley, A., Wolgast, S., Eo, Y. S., Kim, Dae-Jeong, Kurdak, C., Allen, J. W., Sun, K., Chen, X. H., Wang, Y. Y., Fisk, Z., Li, Lu
Publikováno v:
Science 346, 1208 (2014)
In Kondo insulator samarium hexaboride SmB$_6$, strong correlation and band hybridization lead to an insulating gap and a diverging resistance at low temperature. The resistance divergence ends at about 5 Kelvin, a behavior recently demonstrated to a
Externí odkaz:
http://arxiv.org/abs/1306.5221
We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by Shubnikov-d
Externí odkaz:
http://arxiv.org/abs/cond-mat/0608274
Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlGaN/AlN/GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples studied exh
Externí odkaz:
http://arxiv.org/abs/cond-mat/0608254
Autor:
Li, G., Xiang, Z., Yu, F., Asaba, T., Lawson, B., Cai, P., Tinsman, C., Berkley, A., Wolgast, S., Eo, Y. S., Kim, Dae-Jeong, Kurdak, C., Allen, J. W., Sun, K., Chen, X. H., Wang, Y. Y., Fisk, Z., Li, Lu
Publikováno v:
Science, 2014 Dec 01. 346(6214), 1208-1212.
Externí odkaz:
http://www.jstor.org/stable/24745603
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2008 40(5):1586-1589