Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Kurchak, A. I."'
The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in the channel shows that the electron tunnels through a region significa
Externí odkaz:
http://arxiv.org/abs/2012.11203
Publikováno v:
Phys. Rev. Applied 13, 014040 (2020)
Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and WSe2 monoa
Externí odkaz:
http://arxiv.org/abs/1909.10099
The conductivity of the system magnetic dielectric (EuO) - graphene channel - ferroelectric substrate was considered. The magnetic dielectric locally transforms the band spectrum of graphene by inducing an energy gap in it and making it spin-asymmetr
Externí odkaz:
http://arxiv.org/abs/1901.04550
Graphene on ferroelectric structures can be promising candidates for advanced field effect transistors, modulators and electrical transducers, providing that research of their electrotransport and electromechanical performances can be lifted up from
Externí odkaz:
http://arxiv.org/abs/1804.03175
Publikováno v:
Ukrainian Journal of Physics. 63, No. 1, 49 (2018)
Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresis memory effect in a field effect transistor based on graphene-on-ferr
Externí odkaz:
http://arxiv.org/abs/1803.02898
We revealed that 180 degree ferroelectrics domain walls (FDWs) in a ferroelectric substrate, which induce p-n junctions in a graphene channel, lead to the nontrivial temperature and gate voltage dependences of the perpendicular and parallel modes of
Externí odkaz:
http://arxiv.org/abs/1802.07764
This work explores a nontrivial temperature behavior of the carriers concentration, which governs graphene channel conductance in the nano-structure "graphene channel on ferroelectric substrate" that is a basic element for FETs in non-volatile memory
Externí odkaz:
http://arxiv.org/abs/1712.03271
Autor:
Morozovska, Anna N., Eliseev, Eugene A., Kurchak, Anatolii I., Morozovsky, Nicholas V., Vasudevan, Rama K., Strikha, Maksym V., Kalinin, Sergei V.
Publikováno v:
Phys. Rev. B 96, 245405 (2017)
Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigated the role of the surface ions formation ene
Externí odkaz:
http://arxiv.org/abs/1710.10844
Publikováno v:
Phys. Rev. Applied 8, 054004 (2017)
P-N junctions in graphene on ferroelectric have been actively studied, but the impact of piezoelectric effect in ferroelectric substrate with ferroelectric domain walls (FDWs) on graphene characteristics was not considered. Due to the piezo-effect fe
Externí odkaz:
http://arxiv.org/abs/1706.00486
Autor:
Kurchak, Anatolii I., Eliseev, Eugene A., Kalinin, Sergei V., Strikha, Maksym V., Morozovska, Anna N.
Publikováno v:
Phys. Rev. Applied 8, 024027 (2017)
The p-n junctions dynamics in graphene channel induced by stripe domains nucleation, motion and reversal in a ferroelectric substrate is explored using self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical
Externí odkaz:
http://arxiv.org/abs/1703.06500