Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kurban Kurbanov"'
Autor:
A. G. Korotaev, Kurban Kurbanov, V. G. Remesnik, K. D. Mynbaev, Z. Świątek, S. A. Dvoretskii, A. V. Voitsekhovskii, M. V. Yakushev, Jerzy Morgiel, Nikolay N. Mikhailov, V. S. Varavin, H. V. Savytskyy, I. I. Izhnin, O. I. Fitsych, O. Yu. Bonchyk
Publikováno v:
Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass spectroscopy and transmission electron microsco
Autor:
Volodymyr Savchyn, Jozef Cebulski, Sergey Fadeev, Malgorzata Trzyna, Nicolas Berchenko, Kurban Kurbanov
Publikováno v:
Thermochimica Acta. 579:64-69
To clarify the behavior of thermally oxidized PbTe the phase equilibrium diagram was calculated taking into account the change of the standard Gibbs energies of formation with the temperature up to 873 K. The X-ray diffractometry (XRD) studies of the
Publikováno v:
Surface and Interface Analysis. 42:966-969
The composition of the oxide and oxide-semiconductor interface of HgZnTe and HgMnTe alloys was analyzed by the method of equilibrium condensed phase diagrams, and experimentally studied by X-ray diffractometry (XRD) and reflection high-energy electro
Autor:
Vitaly Yakovyna, Kurban Kurbanov, Igor S. Virt, Yuriy Nikiforov, N. N. Berchenko, Ivan Kurilo
Publikováno v:
physica status solidi (c). :1019-1023
This paper is dedicated to the experimental investigation of laser-induced shock waves impact on electrical, photoelectric and mechanical parameters of narrow-gap Hg1–xCdxTe alloys. A mechanism of defect structure rebuilding under the laser shock w
Publikováno v:
SPIE Proceedings.
Effect of iso-valency doping with S, Se or Zn dopants on Hg1-xCdxTe mechanical, structural and photoelectric properties is considered. It was revealed that iso-valency doping reduced the etch pit density and increased the microhardness in Hg1-xCdxTe
Autor:
Viktor Bogoboyashchyy, Igor I. Izhnin, Kurban Kurbanov, Nicolas Berchenko, V. A. Yudenkov, Andrii P. Vlasov
Publikováno v:
SPIE Proceedings.
Investigations and comparative analysis of p-to-n type conductivity processes on the identical samples of vacancy doped p-CdxHg1-xTe (x≈0.2) under IBM and anodic oxide annealing and on the identical samples of As-doped p-CdxHg1-xTe (x≈0.22) under
Publikováno v:
SPIE Proceedings.
Ion beam milling effect on electrical properties of usual vacancy doped and especially In compensated p-CdxHg1-xTe has been investigated. In all cases after ion beam milling by low energy neutralized. Ar ions n-p structure with thickness of n-layers