Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kuppusamy Venkatachalam"'
Publikováno v:
Fractal and Fractional, Vol 8, Iss 4, p 219 (2024)
We investigate a class of boundary value problems (BVPs) involving an impulsive fractional integro-differential equation (IF-IDE) with the Caputo–Hadamard fractional derivative (C-HFD). We employ some fixed-point theorems (FPTs) to study the existe
Externí odkaz:
https://doaj.org/article/0c7aaedecccb47b9a71b505e470492a7
Publikováno v:
Fractal and Fractional, Vol 7, Iss 12, p 884 (2023)
The results for a new modeling integral boundary value problem (IBVP) using Caputo-Hadamard impulsive fractional integro-differential equations (C-HIFI-DE) with Banach space are investigated, along with the existence and uniqueness of solutions. The
Externí odkaz:
https://doaj.org/article/e5c1e7baba5a4a649770b6207803a8e6
Autor:
Haci Mehmet Baskonus, Kulandhivel Karthikeyan, Kuppusamy Venkatachalam, Yu-Ming Chu, Panjaiyan Karthikeyan
Publikováno v:
Mathematical Methods in the Applied Sciences. 45:8045-8059
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::961e31bf592f1b62ae91826f10cf802e
https://doi.org/10.1002/mma.7954
https://doi.org/10.1002/mma.7954
Publikováno v:
Progress in Fractional Differentiation and Applications. 7:127-136
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cd86a34a01713c7898b329cb07a8c51
https://doi.org/10.18576/pfda/070207
https://doi.org/10.18576/pfda/070207
Publikováno v:
IET Circuits, Devices & Systems. 13:1063-1070
The effect of radiation on digital circuits in particularly complementary metal oxide semiconductor (CMOS) technology has been known since many years. The two most important radiation effects are total ionisation dose and single-event effects (SEEs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29253148d03d86ce7ff7f29ac76ef4a1
https://doi.org/10.1049/iet-cds.2018.5232
https://doi.org/10.1049/iet-cds.2018.5232