Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kuppulingam Boopathi"'
Publikováno v:
Applied Surface Science. 449:213-220
Gallium nitride (GaN) nanowires (NWs) are one of the most promising candidates for photoelectrode materials due to their tunable band edge potentials and high stability in electrolytes. In this study, GaN NWs were grown on sapphire (Al2O3) (002) and
Publikováno v:
Applied Physics Letters. 119:153901
Group III-nitride alloys are believed to be promising photoelectrodes for photoelectrochemical water splitting to get hydrogen fuel. Here, we grew the InGaN nanowires (NWs) on silicon (111) as a photoanode using a low-cost chemical vapor deposition m