Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Kupferoxide"'
Autor:
Dhakal, Dileep, Waechtler, Thomas, E. Schulz, Stefan, Gessner, Thomas, Lang, Heinrich, Mothes, Robert, Tuchscherer, Andre
This article has been published online on 21st May 2014, in Journal of Vacuum Science & Technology A: Vac (Vol.32, Issue 4): http://scitation.aip.org/content/avs/journal/jvsta/32/4/10.1116/1.4878815?aemail=author DOI: 10.1116/1.4878815 This article m
Autor:
Rau, Julia S.
Häufig erfahren metallische Oberflächen, die tribologischer Beanspruchung ausgesetzt sind, Änderungen der chemischen Zusammensetzung, welche oft Vorbote und Ursache von Versagen technischer Systeme sein können. Die elementaren Mechanismen tribolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63fd85db5b70cd1a2bfc017ce6209127
Autor:
Waechtler, Thomas, Roth, Nina, Mothes, Robert, Schulze, Steffen, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael
Publikováno v:
ECS Transactions, Vol. 25, No. 4, pp. 277-287 (2009); Digital Object Identifier (DOI): 10.1149/1.3205062
The atomic layer deposition (ALD) of copper oxide films from [(nBu3P)2Cu(acac)] and wet oxygen on SiO2 and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on SiO2, along with
Autor:
Waechtler, Thomas, Oswald, Steffen, Roth, Nina, Jakob, Alexander, Lang, Heinrich, Ecke, Ramona, Schulz, Stefan E., Gessner, Thomas, Moskvinova, Anastasia, Schulze, Steffen, Hietschold, Michael
Publikováno v:
Journal of The Electrochemical Society, Vol. 156, No. 6, pp. H453-H459 (2009); Digital Object Identifier (DOI): 10.1149/1.3110842
The thermal atomic layer deposition (ALD) of copper oxide films from the non-fluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [(nBu3P)2Cu(acac)], and wet O2 on Ta, TaN, Ru and SiO2 substrates at temperatures of < 16
Autor:
Chen, Ying-Hsuan (M. Sc.)
2-Mercaptobenzothiazol (MBT) ist einer der wirksamsten Korrosionsinhibitoren für Cu. Es reagiert mit Cu unter Bildung einer Schicht, die die Oberfläche schützt. Um offene Fragen zur Struktur der passivierenden Schicht zu untersuchen, wurde in dies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3579::58abbce4ea2d1568a850f5d91b6d4571
https://hss-opus.ub.ruhr-uni-bochum.de/opus4/files/5907/diss.pdf
https://hss-opus.ub.ruhr-uni-bochum.de/opus4/files/5907/diss.pdf
Autor:
Dhakal, Dileep
Atomic layer deposition (ALD) of copper films is getting enormous interest. Ultrathin Cu films are applied as the seed layer for electrochemical deposition (ECD) of copper in interconnect circuits and as the non-magnetic material for the realization
Autor:
Giar, Marcel
As non-toxic and sustainable materials the system of binary oxide semiconductors Cu2O, Cu4O3, and CuO is in the focus of current research, e.g., for solar-cell applications. The objective of this work is to analyse the vibrational and Raman spectrosc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______478::71f992c36b8d42dbea5e34a19357a5d7
http://geb.uni-giessen.de/geb/volltexte/2017/13376/
http://geb.uni-giessen.de/geb/volltexte/2017/13376/
Autor:
Dhakal, Dileep
Atomic layer deposition (ALD) of copper films is getting enormous interest. Ultrathin Cu films are applied as the seed layer for electrochemical deposition (ECD) of copper in interconnect circuits and as the non-magnetic material for the realization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::61b26dd69f26aadcdf98894fdbc9ba8a
http://monarch.qucosa.de/api/qucosa:20800/attachment/ATT-0/
http://monarch.qucosa.de/api/qucosa:20800/attachment/ATT-0/
Autor:
Dhakal, Dileep, Waechtler, Thomas, E. Schulz, Stefan, Mothes, Robert, Lang, Heinrich, Gessner, Thomas
This poster was presented in the Materials for Advanced Metallization (MAM) 2014 Conference in Chemnitz, Germany. Abstract: Atomic Layer Deposition (ALD) has emerged as an ubiquitous method for the deposition of conformal and homogeneous ultra-thin f