Zobrazeno 1 - 10
of 149
pro vyhledávání: '"Kuper, F.G."'
Publikováno v:
In Microelectronics Reliability 2006 46(9):1617-1622
Publikováno v:
In Thin Solid Films 2003 427(1):60-66
Publikováno v:
In Microelectronics Reliability 2002 42(9):1421-1425
Autor:
Nguyen, H.V., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B., Bisschop, J., Mouthaan, A.J., Kuper, F.G.
Publikováno v:
In Microelectronics Reliability 2002 42(9):1415-1420
Publikováno v:
In Microelectronics Reliability 2002 42(4):747-765
Publikováno v:
In Microelectronic Engineering 2001 59(1):183-188
Publikováno v:
In Microelectronics Reliability 2001 41(9):1391-1396
Publikováno v:
In Microelectronics Reliability 2000 40(6):909-917
Publikováno v:
IEEE transactions on device and materials reliability, 4(2), 246-255. IEEE
Fast thermal nterconnects used in power ICs are susceptible to short circuit failure due to a combination of fast thermal cycling and electromigration stresses. In this paper, we present a study of electromigration-induced extrusion short-circuit fai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::096a65228fa0a234aee33c6ee1338eb8
http://doi.ieeecomputersociety.org/10.1109/TDMR.2004.826589
http://doi.ieeecomputersociety.org/10.1109/TDMR.2004.826589
Autor:
Li, Yuan, Veenstra, Klaas Jelle, Dubois, Jerome, Peters-Wu, Lei, van Zomeren, Agnes, van Zomeren, A.A., Kuper, F.G.
Publikováno v:
Microelectronics reliability, 43(9-11):10.1016/S0026-2714(03)00257-9, 1449-1454. Elsevier
In this paper the maximum allowed VIA misalignment is determined from VIA electromogration (EM) performance. It is found that positive overlay of metal interconnect at VIAs serves as a reservoir, leading to increased VIA lifetimes. On the onther hand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::556bcef5c486a0c5fd9239163b2c474a
https://doi.org/10.1016/s0026-2714(03)00257-9
https://doi.org/10.1016/s0026-2714(03)00257-9