Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Kuok-Pan Sou"'
Autor:
Shih-Pang Chang, Yuh-Jen Cheng, Chun-Yen Chang, Jet Rung Chang, Meichun Liu, Hao-Chung Kuo, Kuok-Pan Sou
Publikováno v:
Optics express. 21(20)
We report the fabrication and studies of electrically driven green, olivine, and amber color nanopyramid GaN light emitting diodes (LEDs). InGaN/GaN multiple quantum wells (MQWs) were grown on the nanopyramid semipolar facets. Compared with the commo
Autor:
Jun-Yuan Chang, H. C. Kuo, Shih-Pang Chang, Y.J. Cheng, Kuok-Pan Sou, K.C. Hsieh, Y. J. Li, C. Y. Chang
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Autor:
Chun-Yen Chang, Yun-Jing Li, Hao-Chung Kuo, Kuok-Pan Sou, Shih-Pang Chang, Jet Rung Chang, Yuh-Jen Cheng
Publikováno v:
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR).
The radiative and non-radiative lifetime of high In content nanopyramid GaN LEDs are investigated by time resolved and temperature dependent photoluminescent measurement. The radiative recombination efficiency is much improved compared with the conve
Autor:
Ruey-Wen Chang, Kuok-Pan Sou, Jet Rung Chang, Yuh-Jen Cheng, Chun-Yen Chang, Shih-Pang Chang, Yun-Jing Li
Publikováno v:
CLEO: 2013.
We report the growth temperature effect on the crystalline and optical properties of (1122) semipolar GaN and InGaN/GaN MQWs. It shows that a lower growth temperature at 1020 °C produces better crystalline and optical properties.
Autor:
Jun-Yuan Chang, Chun-Yen Chang, Yuh-Jen Cheng, Shih-Pang Chang, Kuok-Pan Sou, Yi-Hsun Chen, Hao-Chung Kuo
Publikováno v:
SPIE Proceedings.
An electrically driven nanopyramid green light emitting diode (LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch, pillar side wall passivation, and epitaxial regrowth. Multiple quantum wel
Autor:
Shih-Pang Chang, Chun-Yen Chang, Ken-Yuh Hsu, Yi-Chen Chen, Kuok-Pan Sou, Hao-Chung Kuo, Jet Rung Chang, Y. J. Li, Yuh-Jen Cheng
Publikováno v:
SPIE Proceedings.
We report the efficiency droop behaviors of InGaN/GaN blue LEDs with different thickness of GaN quantum barriers (QBs). The droop percentage from efficiency peak to 70 A/cm2 is only about 10% as reducing the thickness of GaN QBs from 104 A to 33 A. A
Autor:
Jet Rung Chang, Ken-Yuh Hsu, Yuh-Jen Cheng, Shih-Pang Chang, Yi-Chen Chen, Chun-Yen Chang, Kuok-Pan Sou, Hao-Chung Kuo, Y. J. Li
Publikováno v:
Proceedings of SPIE.
We report the observation of lasing action from optically pumped gallium nitride nanorod arrays in a quasicrystal pattern. The nanorods were fabricated from a GaN substrate by nanoimprint patterned etching, followed by epitaxial regrowth to form crys
Autor:
Shih-Pang Chang, H. C. Kuo, Y. J. Li, C. Y. Chang, Yu-Ying Hsu, Jun-Yuan Chang, Yi-Hsun Chen, Kuok-Pan Sou
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Autor:
Yi-Hsun Chen, H. C. Yang, B. M. Tu, Chun-Yen Chang, Kuok-Pan Sou, T. C. Hsu, Shih-Pang Chang, Y. J. Li, Hao-Chung Kuo, S. S. Yen, Yu-Ying Hsu, Jun-Yuan Chang
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Autor:
W. Y. Chen, Po-Min Tu, S. S. Yen, Kuok-Pan Sou, Yu-Chang Chen, Chiao Yun Chang, Yu-Ying Hsu, Shih-Pang Chang, Jet Rung Chang, Y. J. Li
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.