Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Kuo-Kuang Chen"'
Autor:
Kuo-Kuang Chen, 陳國光
95
This report introduces the structure and function of cable and accessories. In addition, this report also deals with potential environmental factors, aging mechanisms and effects resulting in insulation degradation of cables. The prime purpos
This report introduces the structure and function of cable and accessories. In addition, this report also deals with potential environmental factors, aging mechanisms and effects resulting in insulation degradation of cables. The prime purpos
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/97641686839991391572
Autor:
Ya-Ting Chien, Kuan-Ju Zhou, Mao-Chou Tai, Yu-An Chen, Pei-Jun Sun, Ya-Huan Lee, Ting-Chang Chang, Tsung-Ming Tsai, Yang-Shun Fan, Chen-Shuo Huang, Kuo-Kuang Chen, Chih-Hung Tsai
Publikováno v:
IEEE Transactions on Electron Devices. 70:1089-1094
Autor:
Kuan-Ju Zhou, Ting-Chang Chang, Mao-Chou Tai, Yu-An Chen, Ya-Ting Chien, Pei-Jun Sun, Po-Yu Yen, Simon M. Sze, Yang-Shun Fan, Chen-Shuo Huang, Kuo-Kuang Chen, Chih-Hung Tsai
Publikováno v:
ACS Applied Electronic Materials. 5:1183-1188
Autor:
Ko-Ruey Jen, Yi-Chien Chen, Yu-Ching Chang, Yang-Shun Fan, Chen-Shuo Huang, Ying-Hsuan Tang, Chia-Wei Chiang, Po-Jui Huang, Kai-Chuin Lim, Chih-Cheng Chen, Yung-Chih Chen, Kuo-Kuang Chen
Publikováno v:
SID Symposium Digest of Technical Papers. 53:1137-1140
Autor:
Bo Wei Chen, Yu-Ju Hung, Chen Shuo Huang, Yu-Hsin Lin, Wei-Chih Lai, Hsueh Hsing Lu, Ting-Chang Chang, Kai Chung Cheng, Guan Fu Chen, Kuo Jui Chang, Kuo Kuang Chen, Hong Chih Chen
Publikováno v:
ACS Applied Materials & Interfaces. 10:25866-25870
This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (N
Autor:
Hua-Mao Chen, Ya-Hsiang Tai, Cheng-Ya Li, Ting-Chang Chang, Yu-Ju Hung, Guan-Fu Chen, Kuo-Kuang Chen, Chang Kuo-Jui, Bo-Wei Chen, Yu-Hsin Lin, Chen-Shuo Huang, Kai Chung Cheng, Hsueh-Hsing Lu, Hong-Chih Chen
Publikováno v:
IEEE Electron Device Letters. 38:334-337
This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing
Autor:
Chun-Hsin Liu, Peng-Yu Chen, Yu-Hsin Lin, Hsueh-Hsing Lu, Hong-Jye Hong, Kuo-Kuang Chen, KR Jen
Publikováno v:
SID Symposium Digest of Technical Papers. 49:621-623
Autor:
Matthew Creally, Mark Goulding, Kuan-Heng Lin, Hsueh-Hsing Lu, Kuo-Kuang Chen, Kun-Ta Lu, Meng-Ting Lee, Hsin-Rong Tseng, Daniel Walker, Gaëlle Béalle, Edgar Boehm, Yu-Hsin Lin, Yi-Hong Chen, Tsu-Wei Chen, Chen Wen-Pin, Hsing-Ju Wang, Herwig Buchholz
Publikováno v:
SID Symposium Digest of Technical Papers. 49:624-626
Autor:
Hua-Mao Chen, Tien-Yu Hsieh, Yu-Xin Yang, Ching-En Chen, Ting-Chang Chang, Po-Yung Liao, Kuo-Kuang Chen, Ming-Yen Tsai, Tsung-Hsiang Shih, Ann-Kuo Chu, Bo-Wei Chen, Hsueh-Hsing Lu
Publikováno v:
SID Symposium Digest of Technical Papers. 46:1147-1150
Single-Stage Coupled-Inductor Sepic-Type HB-LED Driver with Soft Switching for Universal Line Input.
Autor:
Chih-Lung Shen1 clshen@nkfust.edu.tw, Kuo-Kuang Chen2
Publikováno v:
Mathematical Problems in Engineering. 2012, Vol. 2012, Special section p1-17. 17p.