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Autor:
Kuo-HungLee, 李國弘
100
In this work, we present a surface treatment of hydrogen peroxide to fabricate a passivated and metal-oxide-semiconductor high electron mobility transistors. The advantages of this method are fast, low cost, simple process and improve the de
In this work, we present a surface treatment of hydrogen peroxide to fabricate a passivated and metal-oxide-semiconductor high electron mobility transistors. The advantages of this method are fast, low cost, simple process and improve the de
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/50238160334662701425